- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363666 > NSDEMN11XV6T1 (ON SEMICONDUCTOR) Common Cathode Quad Array Switching Diode PDF資料下載
參數(shù)資料
| 型號： | NSDEMN11XV6T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Common Cathode Quad Array Switching Diode |
| 中文描述： | 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, CASE 463A-01, 6 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 50K |
| 代理商： | NSDEMN11XV6T1 |
NSDEMN11XV6T1, NSDEMN11XV6T5
http://onsemi.com
4
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25
°
C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT-563 POWER DISSIPATION
P
D
=
T
J(max)
- T
A
R
JA
P
D
=
150
°
C - 25
°
C
833
°
C/W
= 150 milliwatts
The power dissipation of the SOT-563 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T
J(max)
, the maximum rated junction temperature
of the die, R
JA
, the thermal resistance from the device
junction to ambient, and the operating temperature, T
A
.
Using the values provided on the data sheet for the
SOT-563 package, P
D
can be calculated as follows:
The 833
°
C/W for the SOT-563 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT-563 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
°
C.
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
1.35
0.0531
0.5
0.0197
mm
inches
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
SOT-563
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NSDEMN11XV6T5 | Common Cathode Quad Array Switching Diode |
| NSDEMP11XV6T1 | Common Anode Quad Array Switching Diode |
| NSDEMP11XV6T5 | Common Anode Quad Array Switching Diode |
| NSE-5310 | 0,488μm/step (I2C, PWM) |
| NSF2250WT1 | NPN Silicon Oscillator and Mixer Transistor(NPN硅振蕩器與混頻晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSDEMN11XV6T1G | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA Quad Common Cathode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMN11XV6T5 | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMN11XV6T5G | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA Quad Common Cathode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMP11XV6T1 | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMP11XV6T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Common Anode Quad Array Switching Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。