- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363666 > NSF2250WT1 (ON SEMICONDUCTOR) NPN Silicon Oscillator and Mixer Transistor(NPN硅振蕩器與混頻晶體管) PDF資料下載
參數(shù)資料
| 型號： | NSF2250WT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Oscillator and Mixer Transistor(NPN硅振蕩器與混頻晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 83K |
| 代理商： | NSF2250WT1 |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 5
1
Publication Order Number:
NSF2250WT1/D
NSF2250WT1
NPN Silicon Oscillator and
Mixer Transistor
The NSF2250WT1 NPN silicon epitaxial bipolar transistor is
intended for use in general purpose UHF oscillator and mixer
applications. It is suitable for automotive keyless entry and TV tuner
designs.
The device features stable oscillation and small frequency drift
during changes in the supply voltage and over the ambient temperature
range.
Features
High Gain Bandwidth Product: f
T
= 2000 MHz Minimum
Tightly Controlled h
FE
Range: h
FE
= 120 to 250
Low Feedback Capacitance: C
RE
= 0.45 pF Typical
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Units
Collector to Base Voltage
V
CBO
30
V
Collector to Emitter Voltage
V
CEO
15
V
Emitter to Base Voltage
VE
BO
3.0
V
Collector Current
I
C
50
mA
Electrostatic Discharge
ESD
HBM Class 1C
MM Class A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
mW/
°
C
Thermal Resistance, Junction-to-Ambient
R
JA
618 (Note 1)
403 (Note 2)
°
C/W
Thermal Resistance, Junction-to-Lead
R
JL
280 (Note 1)
332 (Note 2)
°
C/W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
Device
Package
Shipping
ORDERING INFORMATION
NSF2250WT1
SOT323
SOT323/SC70
CASE 419
STYLE 3
3000/Tape & Reel
MARKING DIAGRAM
1
COLLECTOR
3
1
BASE
2
EMITTER
3M M
3M
M
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
NSF2250WT1G
SOT323
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NSHU550E | 2 x 110 W class-D power amplifer, SOT411-1 (DBS23P), Tube |
| NSHU590A | SPECIFICATIONS FOR NICHIA UV LED |
| NSHU590B | SPECIFICATIONS FOR NICHIA UV LED |
| NSPB300A | SPECIFICATIONS FOR NICHIA BLUE LED |
| NSPB310A | SPECIFICATIONS FOR NICHIA BLUE LED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSF2250WT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon Oscillator and Mixer Transistor |
| NSF2250WT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Oscillator and Mixer Transistor |
| NSF2250WT1G | 制造商:ON Semiconductor 功能描述: |
| NSF250 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-3 |
| NSF4 | 制造商:Apex Tool Group 功能描述:DISPLAY, ASSORTED CARDED HACKSAW BLADES |
發(fā)布緊急采購，3分鐘左右您將得到回復。