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參數(shù)資料
| 型號： | NSDEMN11XV6T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Common Cathode Quad Array Switching Diode |
| 中文描述： | 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, CASE 463A-01, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 50K |
| 代理商： | NSDEMN11XV6T1 |
Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 1
1
Publication Order Number:
NSDEMN11XV6T1/D
NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT-563 package which is designed for low power surface mount
applications, where board space is at a premium.
Fast t
rr
Low C
D
Available in 8 mm; 7 Inch Tape and Reel
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
80
Vdc
Peak Reverse Voltage
V
RM
80
Vdc
Forward Current
I
F
100
mAdc
Peak Forward Current
I
FM
300
mAdc
Peak Forward Surge Current
I
FSM
(Note 1)
2.0
Adc
1. t = 1
S
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
357
(Note 2)
2.9
(Note 2)
mW
mW/
°
C
Thermal Resistance Junction-to-Ambient
R
JA
350
(Note 2)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
500
(Note 2)
4.0
(Note 2)
mW
mW/
°
C
Thermal Resistance Junction-to-Ambient
R
JA
250
(Note 2)
°
C/W
Junction and Storage Temperature
T
J
, T
stg
- 55 to
+150
°
C
2. FR-4 @ Minimum Pad
http://onsemi.com
SOT-563
CASE 463A
PLASTIC
123
654
N9 = Specific Device Code
D
= Date Code
MARKING
DIAGRAM
N9 D
(1)
(2)
(3)
(4)
(5)
(6)
Device
Package
Shipping
ORDERING INFORMATION
NSDEMN11XV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
NSDEMN11XV6T5
SOT-563
2 mm pitch
8000/Tape & Reel
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| NSDEMP11XV6T5 | Common Anode Quad Array Switching Diode |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NSDEMN11XV6T1G | 功能描述:二極管 - 通用，功率，開關 80V 100mA Quad Common Cathode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMN11XV6T5 | 功能描述:二極管 - 通用，功率，開關 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMN11XV6T5G | 功能描述:二極管 - 通用，功率，開關 80V 100mA Quad Common Cathode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMP11XV6T1 | 功能描述:二極管 - 通用，功率，開關 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMP11XV6T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Common Anode Quad Array Switching Diode |
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