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參數(shù)資料
| 型號： | NSDEMP11XV6T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Common Anode Quad Array Switching Diode |
| 中文描述： | 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | NSDEMP11XV6T1 |
Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 1
1
Publication Order Number:
NSDEMP11XV6T1/D
NSDEMP11XV6T1,
NSDEMP11XV6T5
Common Anode Quad
Array Switching Diode
These Common Anode Epitaxial Planar QUAD Diodes are
designed for use in ultra high speed switching applications. The
NSDEMP11XV6T1 device is housed in the SOT-563 package which
is designed for low power surface mount applications, where board
space is at a premium.
Fast t
rr
Low C
D
Available in 8 mm; 7 inch Tape and Reel
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
(Note 1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
1. t = 1 S
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
357
(Note 2)
2.9
(Note 2)
mW
mW/
°
C
Thermal Resistance Junction-to-Ambient
R
JA
350
(Note 2)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
500
(Note 2)
4.0
(Note 2)
mW
mW/
°
C
Thermal Resistance Junction-to-Ambient
R
JA
250
(Note 2)
°
C/W
Junction and Storage Temperature
T
J
, T
stg
- 55 to
+150
°
C
2. FR-4 @ Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
V
F
V
R
C
D
V
R
= 70 V
I
F
= 100 mA
I
R
= 100 A
V
R
= 6.0 V, f = 1.0 MHz
-
0.1
Adc
Forward Voltage
-
1.2
Vdc
Reverse Breakdown Voltage
-0
—
Vdc
Diode Capacitance
-
3.5
pF
Reverse Recovery Time
t
rr
(Note 2)
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 100 , I
rr
= 0.1 I
R
-
4.0
ns
3. t
rr
Test Circuit for NSDEMP11XV6T1 in Figure 4.
http://onsemi.com
SOT-563
CASE 463A
PLASTIC
123
654
P9 = Specific Device Code
D
= Date Code
MARKING
DIAGRAM
P9 D
(1)
(2)
(3)
(4)
(5)
(6)
Device
Package
Shipping
ORDERING INFORMATION
NSDEMP11XV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
NSDEMP11XV6T5
SOT-563
2 mm pitch
8000/Tape & Reel
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|---|---|
| NSDEMP11XV6T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Common Anode Quad Array Switching Diode |
| NSDEMP11XV6T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Common Anode Quad Array Switching Diode |
| NSDEMP11XV6T1G | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA Quad Common Anode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMP11XV6T5 | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSDEMP11XV6T5G | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA Quad Common Anode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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