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參數(shù)資料
| 型號： | NSBMC096VF |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | NSBMC096-16/-25/-33 Burst Memory Controller |
| 中文描述： | NSBMC096-16/-25/-33突發(fā)內(nèi)存控制器 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大小： | 266K |
| 代理商： | NSBMC096VF |
Functional Description
PRODUCT OVERVIEW
The NSBMC960 couples the i960 CA/CF interface to
DRAM access protocols, generates bus buffer and data
multiplexor controls and incorporates system and bus moni-
tor timing resources. These functional elements are shown
inFigure 1. A maximum of 8 controllers may be included in a
system, each managing up to 4 banks of memory.
The NSBMC960 directly drives an array of fast page mode
DRAMs. This array may be organized as 1 or 2 leaves of
32 bits each. Standard memory sizes from 256 kbit to
64 Mbit are supported and 8-, 16-, and 32-bit access are
allowed. If interleaved mode is selected, burst access is
zero-wait-state; if memory is non-interleaved, 1-wait-state
burst access results.
The NSBMC960 allows for flexibility in the control of data
buffers to the memory array. Propagation delay is minimized
by providing these controls directly, and design flexibility
maximized by allowing the control strategy to be program-
mable. Buffers as diverse as 74FCT245, 74FCT543,
74FCT646, 74FCT853 and 74FCT861 may be used without
additional glue logic.
TL/V/11805–4
FIGURE 1. Functional Block Diagram
CONFIGURATION AND CONTROL
The NSBMC960 contains 64 bits of configuration data that
controls it’s operational mode. The configuration is pro-
grammed by sending data on the address bus. Figure 2
shows the format of a configuration access. The byte select
field determines which byte of the 64-bit field will be updat-
ed by the contents of the byte data field. Bits
[
1,0
]
are re-
served and must be ‘‘0’’. The base address is fixed at
0xff0f0000 while the BMC select field must match the value
programmed at the ID
[
2..0
]
pins. In order to protect against
accidental programming, the configuration registers can
only be modified when the processor is in supervisor mode.
TL/V/11805–5
FIGURE 2. Address Bus Fields Used to Access Configuration Data
6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NSBMC096-16 | NSBMC096-16/-25/-33 Burst Memory Controller |
| NSBMC290-16 | Burst Mode Memory Controller |
| NSBMC290UP | Burst Mode Memory Controller |
| NSBMC290VF | Burst Mode Memory Controller |
| NSC800 | NSC800TM High-Performance Low-Power CMOS Microprocessor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSBMC096VF-16 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM Controller |
| NSBMC096VF-25 | 功能描述:IC CONTROLLER BURST MEM 132-PQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標準包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應商設(shè)備封裝:16-SOIC W 包裝:管件 |
| NSBMC096VF-33 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM Controller |
| NSBMC290 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| NSBMC290-16 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Burst Mode Memory Controller |
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