參數(shù)資料
型號: NSAM266SVLJ
廠商: National Semiconductor Corporation
元件分類: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 14/52頁
文件大小: 571K
代理商: NSAM266SVLJ
1.0 Hardware
(Continued)
TL/EE/12584–15
Signal B starts after rising or falling edge of signal A.
FIGURE 1-13. Asynchronous Signals
The RESET signal has a Schmitt trigger input buffer. Figure 1-14 shows the characteristics of the input buffer.
TL/EE/12584–16
FIGURE 1-14. Hysteresis Input Characteristics
http://www.national.com
14
相關(guān)PDF資料
PDF描述
NSAM266SA 4 Mbit Uniform Sector, Serial Flash Memory
NSAM266SAA 4 Mbit Uniform Sector, Serial Flash Memory
NSB8 BASIC interpreter for Z80 family
NSB9435T1 High Current Bias Resistor Transistors(高強度電流偏置電阻晶體管)
NSBA114EDXV6T1 Dual Bias Resistor Transistors(雙偏置電阻晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NSAM2AS1012VDC 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Suitable for automobile accessories
NSAM2AS1018VDC 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Suitable for automobile accessories
NSAM2AS1024VDC 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Suitable for automobile accessories
NSAM2AS103VDC 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Switching capacity up to 20A
NSAM2AS105VDC 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Suitable for automobile accessories