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參數(shù)資料
| 型號(hào)： | NSAM266SVLJ |
| 廠商： | National Semiconductor Corporation |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁(yè)數(shù)： | 12/52頁(yè) |
| 文件大?。?/td> | 571K |
| 代理商： | NSAM266SVLJ |
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1.0 Hardware
(Continued)
1.4.3 Switching Characteristics
Definitions
All timing specifications in this section refer to 0.8V or 2.0V
on the rising or falling edges of the signals, as illustrated in
Figures 1-8 through 1-14, unless specifically stated other-
wise.
Maximum times assume capacitive loading of 50 pF.
CLKIN crystal frequency is 40.96 MHz.
Note:
CTTL is an internal signal and is used as a reference to explain the
timing of other signals. See Figure 1-22.
TL/EE/12584–10
Signal valid, active or inactive time, after a rising edge of CTTL or MWCLK.
FIGURE 1-8. Synchronous Output Signals (Valid, Active and Inactive)
TL/EE/12584–11
Signal valid time, after a falling edge of MWCLK.
FIGURE 1-9. Synchronous Output Signals (Valid)
TL/EE/12584–12
Signal hold time, after a rising edge of CTTL.
FIGURE 1-10. Synchronous Output Signals (Hold)
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