參數(shù)資料
型號(hào): NSAM266SVLJ
廠(chǎng)商: National Semiconductor Corporation
元件分類(lèi): FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 11/52頁(yè)
文件大?。?/td> 571K
代理商: NSAM266SVLJ
1.0 Hardware
(Continued)
1.4 SPECIFICATIONS
1.4.1 Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature
b
65
§
C to
a
150
§
C
0
§
C to
a
70
§
C
Temperature under Bias
All Input or Output Voltages,
with Respect to GND
b
0.5V to
a
6.5V
Note:
Absolute maximum ratings indicate limits beyond which permanent
damage may occur. Continuous operation at these limits is not intend-
ed; operation should be limited to those conditions specified below.
1.4.2 Electrical Characteristics
T
A
e
0
§
C to
a
70
§
C, V
CC
e
5V
g
10%, GND
e
0V
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IH
TTL Input,
Logical 1 Input Voltage
2.0
V
CC
a
0.5
V
V
IL
TTL Input, Logical 0 Input Voltage
b
0.5
0.8
V
V
XH
CLKIN Input, High Voltage
External Clock
2.0
V
V
XL
CLKIN Input, Low Voltage
External Clock
0.8
V
V
ENVh
ENV0 High Level, Input Voltage
3.6
V
V
Hh
CMOS Input with Hysteresis,
Logical 1 Input Voltage
3.6
V
V
HI
CMOS Input with Hysteresis,
Logical 0 Input Voltage
1.1
V
V
Hys
Hysteresis Loop Width (Note A)
0.5
V
V
OH
Logical 1 TTL, Output Voltage
I
OH
e b
0.4 mA
2.4
V
V
OHWC
MMCLK, MMDOUT and EMCS
Logical 1, Output Voltage
I
OH
e b
0.4 mA
2.4
V
I
OH
e b
50
m
A (Note B)
V
CC
b
0.2
V
V
OL
Logical 0, TTL Output Voltage
I
OL
e
4 mA
0.45
V
I
OL
e
50
m
A (Note B)
0.2
V
V
OLWC
MMCLK, MMDOUT and EMCS
Logical 0, Output Voltage
I
OL
e
4.0 mA
0.45
V
I
OL
e
50
m
A (Note B)
0.2
V
I
L
Input Load Current (Note C)
0V
s
V
IN
s
V
CC
b
5.0
5.0
m
A
I
O
(Off)
Output Leakage Current
(I/O Pins in Input Mode) (Note C)
0V
s
V
OUT
s
V
CC
b
5.0
5.0
m
A
I
CC1
Active Supply Current
Normal Operation Mode,
Running Speech Applications (Note D)
65
80
mA
I
CC2
Standby Supply Current
Normal Operation Mode,
DSPM Idle (Note D)
40
mA
I
CC3
Power-Down Mode
Supply Current
Power-Down Mode
(Notes D and E)
1.5
mA
C
X
X1 and X2 Capacitance (Note A)
17
pF
Note A:
Guaranteed by design.
Note B:
Measured in power-down mode. The total current driven, or sourced, by all the CompactSPEECH’s output signals is
k
50
m
A.
Note C:
Maximum 20
m
A for all pins together.
Note D:
I
OUT
e
0, T
A
e
25
§
C, V
CC
e
5V, operating from a 40.96 MHz crystal, and running from internal memory with Expansion Memory disabled.
Note E:
All input signals are tied to 1 or 0 (above V
CC
b
0.5 or below V
SS
a
0.5V).
http://www.national.com
11
相關(guān)PDF資料
PDF描述
NSAM266SA 4 Mbit Uniform Sector, Serial Flash Memory
NSAM266SAA 4 Mbit Uniform Sector, Serial Flash Memory
NSB8 BASIC interpreter for Z80 family
NSB9435T1 High Current Bias Resistor Transistors(高強(qiáng)度電流偏置電阻晶體管)
NSBA114EDXV6T1 Dual Bias Resistor Transistors(雙偏置電阻晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NSAM2AS1012VDC 制造商:DBLECTRO 制造商全稱(chēng):DB Lectro Inc 功能描述:Suitable for automobile accessories
NSAM2AS1018VDC 制造商:DBLECTRO 制造商全稱(chēng):DB Lectro Inc 功能描述:Suitable for automobile accessories
NSAM2AS1024VDC 制造商:DBLECTRO 制造商全稱(chēng):DB Lectro Inc 功能描述:Suitable for automobile accessories
NSAM2AS103VDC 制造商:DBLECTRO 制造商全稱(chēng):DB Lectro Inc 功能描述:Switching capacity up to 20A
NSAM2AS105VDC 制造商:DBLECTRO 制造商全稱(chēng):DB Lectro Inc 功能描述:Suitable for automobile accessories