- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363251 > NESG2031M05 (NEC Corp.) NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR PDF資料下載
參數(shù)資料
| 型號： | NESG2031M05 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
| 中文描述： | 鄰舍npn型硅鍺高頻陳德良SIS的職權(quán)范圍 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 156K |
| 代理商： | NESG2031M05 |
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
FREQUENCY S
11
S
21
S
12
S
22
K MAG
1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.200 0.905 -17.55 13.476 166.44 0.015 75.48 0.961 -12.14 0.109 29.62
0.400 0.883 -35.30 12.930 153.01 0.027 67.20 0.917 -22.40 0.114 26.77
0.600 0.800 -50.74 11.773 139.58 0.036 57.16 0.838 -29.39 0.260 25.09
0.800 0.747 -65.74 10.912 128.86 0.044 50.21 0.774 -36.45 0.312 23.91
1.000 0.700 -79.13 10.032 119.48 0.050 44.20 0.717 -42.55 0.364 22.98
1.200 0.651 -91.64 9.211 110.79 0.055 39.35 0.668 -47.96 0.421 22.20
1.400 0.605 -103.05 8.432 102.94 0.059 34.88 0.624 -52.70 0.487 21.55
1.600 0.569 -114.06 7.754 95.75 0.062 31.30 0.586 -57.00 0.544 20.94
1.800 0.544 -123.33 7.158 89.32 0.065 28.57 0.557 -60.70 0.597 20.44
1.900 0.525 -128.19 6.874 86.26 0.066 27.02 0.542 -62.68 0.632 20.20
2.000 0.515 -132.91 6.638 83.05 0.067 25.54 0.529 -64.60 0.657 19.96
2.100 0.504 -137.65 6.391 80.23 0.068 24.56 0.517 -66.48 0.683 19.73
2.200 0.499 -141.94 6.159 77.36 0.069 23.62 0.508 -68.03 0.701 19.49
2.300 0.487 -145.95 5.948 74.61 0.070 22.54 0.496 -69.64 0.737 19.31
2.400 0.476 -150.04 5.744 71.95 0.071 21.41 0.488 -71.29 0.765 19.10
2.500 0.470 -154.38 5.553 69.39 0.072 20.20 0.481 -73.07 0.787 18.90
2.600 0.465 -158.84 5.379 66.64 0.073 19.38 0.474 -74.39 0.805 18.69
2.700 0.459 -162.43 5.214 64.24 0.073 18.80 0.468 -76.05 0.828 18.51
2.800 0.454 -166.08 5.060 61.68 0.074 18.02 0.462 -77.35 0.851 18.34
2.900 0.447 -170.06 4.915 59.28 0.075 17.16 0.456 -79.07 0.878 18.18
3.000 0.444 -173.81 4.761 57.03 0.076 15.82 0.453 -80.50 0.895 17.98
3.200 0.438 178.47 4.501 52.30 0.078 14.90 0.444 -83.07 0.932 17.64
3.400 0.428 171.27 4.273 47.78 0.079 13.32 0.440 -85.90 0.974 17.33
3.600 0.427 163.98 4.057 43.37 0.081 11.88 0.434 -88.27 1.003 16.66
3.800 0.423 157.49 3.872 39.01 0.082 11.04 0.430 -90.93 1.033 15.60
4.000 0.422 149.92 3.698 34.77 0.085 9.18 0.428 -93.39 1.055 14.98
4.200 0.426 143.92 3.541 30.51 0.087 8.09 0.426 -96.22 1.066 14.54
4.400 0.420 137.30 3.394 26.35 0.088 6.73 0.427 -98.70 1.096 13.97
4.600 0.428 130.50 3.262 22.21 0.091 4.94 0.422 -101.17 1.103 13.61
4.800 0.430 125.03 3.136 18.13 0.093 4.19 0.423 -103.93 1.115 13.23
5.000 0.434 118.39 3.023 14.16 0.094 2.32 0.423 -106.12 1.131 12.86
5.200 0.445 112.90 2.915 10.11 0.097 0.88 0.422 -108.86 1.117 12.68
5.400 0.445 107.35 2.823 6.11 0.099 -0.22 0.423 -111.50 1.133 12.34
5.600 0.456 101.71 2.727 2.18 0.102 -2.52 0.423 -114.31 1.123 12.15
5.800 0.461 96.57 2.643 -1.88 0.104 -3.64 0.421 -117.30 1.129 11.87
6.000 0.467 90.38 2.564 -5.81 0.106 -5.93 0.419 -119.34 1.136 11.60
7.000 0.515 69.13 2.189 -24.90 0.118 -14.29 0.414 -135.23 1.120 10.59
8.000 0.557 48.59 1.912 -43.02 0.129 -23.38 0.403 -148.98 1.113 9.68
9.000 0.603 28.65 1.706 -61.61 0.143 -33.62 0.392 -164.98 1.048 9.43
10.000 0.658 9.89 1.525 -80.10 0.154 -44.64 0.382 177.36 0.981 9.96
11.000 0.711 -6.46 1.363 -98.43 0.163 -56.19 0.363 158.46 0.926 9.23
12.000 0.755 -21.02 1.228 -116.23 0.172 -68.02 0.339 141.23 0.863 8.54
NESG2031M05
V
C
= 2 V, I
C
= 5 mA
NESG2031M05
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
50
10
25
100
S
22
S
11
+90o
+135o
-135o
-90o
-45o
+45o
+0o
.2
.4
.8
.6
1
+180o
S
12
S
21
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NESG2031M05-T1 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
| NESG204619 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| NESG204619-A | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| NESG204619-T1-A | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| NESG2101M16 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2031M05-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05-EVNF58 | 功能描述:射頻硅鍺晶體管 For NESF2031M05-A Noise Fig at 5.8 GHz RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 5V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R |
| NESG2031M05-T1-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M16 | 功能描述:射頻硅鍺晶體管 RO 551-NESG2031M16-A RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。