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參數(shù)資料
| 型號： | NESG2031M05 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
| 中文描述： | 鄰舍npn型硅鍺高頻陳德良SIS的職權(quán)范圍 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 156K |
| 代理商： | NESG2031M05 |
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
x 1.0 mm (t) glass epoxy PCB.
SYMBOLS PARAMETERS UNITS RATINGS
V
CBO
Collector to Base Voltage V 13.0
V
CEO
Collector to Emitter Voltage V 5.0
V
EBO
Emitter to Base Voltage V 1.5
I
C
Collector Current mA 35
P
T
2
Total Power Dissipation mW 175
T
J
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
R
th j-c
Junction to Case Resistance °C/W TBD
THERMAL RESISTANCE
NESG2031M05
PART NUMBER QUANTITY SUP PLY NG FORM
NESG2031M05-T1 3 kpcs/reel Pin 3 (Collector), Pin 4 (Emitter)
face the perforation
side of the tape
8 mm wide embossed taping
ORDERING INFORMATION
Collector to Base Voltage, V
CB
(V)
R
r
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
Base to Emitter Voltage, V
BE
(V)
C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLT AGE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Ambient Temperature, T
A
(°C)
T
t
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Base to Emitter Voltage, V
BE
(V)
C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Mounted on Glass Epoxy PCB
(1.08 cm
×
1.0 mm (t) )
250
200
150
175
100
50
0
25
50
75
100
125
150
f = 1 MHz
0.3
0.2
0.1
0
2
4
6
8
10
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
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| NESG2031M05-T1 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
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| NESG204619-A | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2031M05-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05-EVNF58 | 功能描述:射頻硅鍺晶體管 For NESF2031M05-A Noise Fig at 5.8 GHz RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M05-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 5V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R |
| NESG2031M05-T1-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2031M16 | 功能描述:射頻硅鍺晶體管 RO 551-NESG2031M16-A RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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