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參數(shù)資料
| 型號(hào)： | NE960R5 |
| 廠商： | NEC Corp. |
| 英文描述： | 0.5 W X, Ku-BAND POWER GaAs MES FET |
| 中文描述： | 0.5蠟質(zhì)，Ku波段功率GaAs場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | NE960R5 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
Document No. P13775EJ2V0DS00 (2nd edition)
Date Published July 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1998, 1999
The mark
shows major revised points.
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-
band microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers
etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source
grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically
sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control
procedures.
FEATURES
High Output Power
High Linear Gain
High Power Added Efficiency: 35 % TYP. @V
DS
= 9 V, I
Dset
= 90 mA, f = 14.5 GHz
: P
o (1 dB)
= +25.0 dBm TYP.
: 10.0 dB TYP.
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE960R200
NE961R200
00 (CHIP)
NE960R275
75
ESD protective envelope
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R200, NE960R275, NE961R200)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。