參數(shù)資料
型號(hào)： NE76000
廠商： NEC Corp.
英文描述： LOW NOISE L TO Ku BAND GaAs MESFET
中文描述： 低噪聲L降至Ku波段功率GaAs MESFET
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 52K
代理商： NE76000
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
0.1
0.2
0.5
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
0.999
0.999
0.998
0.996
0.993
0.985
0.969
0.947
0.923
0.890
0.874
0.855
0.825
0.808
0.766
0.741
0.723
0.700
0.677
0.665
0.638
0.616
-2.0
-3.0
-7.0
-13.0
-20.0
-27.0
-39.0
-50.0
-61.0
-70.0
-78.0
-87.0
-96.0
-104.0
-120.0
-135.0
-147.0
-155.0
-162.0
-171.0
178.0
164.0
3.291
3.282
3.280
3.265
3.218
3.185
3.079
2.950
2.814
2.669
2.545
2.446
2.328
2.237
2.077
1.926
1.800
1.653
1.528
1.464
1.390
1.286
179.0
178.0
175.0
169.0
164.0
158.0
148.0
138.0
129.0
120.0
113.0
104.0
97.0
90.0
76.0
63.0
53.0
43.0
35.0
26.0
16.0
7.0
0.002
0.004
0.010
0.020
0.030
0.039
0.057
0.072
0.085
0.094
0.104
0.110
0.114
0.119
0.132
0.134
0.134
0.130
0.121
0.115
0.121
0.123
90.0
89.0
85.0
81.0
78.0
74.0
66.0
59.0
51.0
47.0
41.0
36.0
30.0
29.0
19.0
12.0
6.0
3.0
4.0
4.0
5.0
4.0
0.677
0.677
0.675
0.673
0.671
0.666
0.655
0.640
0.621
0.602
0.590
0.579
0.565
0.565
0.558
0.549
0.553
0.530
0.519
0.520
0.537
0.538
-1.0
-2.0
-4.0
-8.0
-12.0
-16.0
-23.0
-30.0
-36.0
-42.0
-47.0
-53.0
-58.0
-63.0
-73.0
-81.0
-88.0
-94.0
-99.0
-107.0
-116.0
-123.0
0.06
0.02
0.04
0.05
0.04
0.07
0.12
0.17
0.24
0.30
0.34
0.38
0.45
0.45
0.52
0.59
0.64
0.80
0.98
1.08
1.08
1.18
10.3
10.3
10.3
10.2
10.1
10.0
9.7
9.3
8.9
8.5
8.1
7.7
7.3
6.9
6.3
5.6
5.1
4.3
3.6
3.3
2.8
2.1
32.1
29.1
25.1
22.1
20.3
19.1
17.3
16.1
15.1
14.5
13.8
13.4
13.1
12.7
11.9
11.5
11.2
11.0
11.0
9.3
8.8
7.5
Notes:
1.
S-parameters include bond wires.
Gate:
Total 2 wire (s), 1 per bond pad, 0.0139" (354
μ
m) long each wire.
Drain:
Total 2 wire(s), 1 per bond pad, 0.0115" (291
μ
m) long each wire.
Source:
Total 4 wire (s), 2 per side, 0.0066" (168
μ
m) long each wire.
Wire:
0.0007" (17.8
μ
m) Diameter, Gold.
2. Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
FREQUENCY
(GHz)
S
11
S
21
S
12
S
22
K
S
21
(dB)
MAG
2
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
NE76000
1
V
DS
= 3 V, I
D
= 10 mA
Coordinates in Ohms
Frequency in GHz
(V
DS
= 3 V, I
D
= 10 mA)
NE76000
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
j250
j150
j100
j50
j25
j10
0
-j10
-j25
-j50
-j100
-j150
-j250
10
25
50
100 150 250
S
22
0.1 GHz
500
S
22
26 GHz
S
11
0.1 GHz
S
11
26 GHz
+90
+60
+30
+120
+150
-150
-120
-90
-60
-30
0
+180
–
S
12
26 GHz
.20
S
21
0.1 GHz
.25
.15
5
4
3
2
1
S
21
S
12
0.1 GHz
S
21
26 GHz
相關(guān)PDF資料
PDF描述
NE76000L LOW NOISE L TO Ku BAND GaAs MESFET
NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76084-SL C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76084-T1 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76084-T1A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE76000L 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO Ku BAND GaAs MESFET
NE760084 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
NE76038 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO Ku-BAND GaAs MESFET
NE76038-T1 功能描述:MOSFET DISC BY NEC 5/99 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE76084 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
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