參數(shù)資料
型號: NE71383B
廠商: NEC Corp.
英文描述: L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
中文描述: L降至Ku波段低噪聲放大器N溝道砷化鎵場效應(yīng)晶體管
文件頁數(shù): 2/16頁
文件大小: 92K
代理商: NE71383B
2
NE713
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
1.0
10
μ
A
V
GS
=
5 V
Saturated Drain Current
I
DSS
20
40
120
mA
V
DS
= 3 V, V
GS
= 0 V
Gate to Source Cut off Voltage
V
GS (off)
0.5
1.1
3.5
V
V
DS
= 3 V, I
D
= 100
μ
A
Transconductance
gm
20
50
mS
V
DS
= 3 V, I
D
= 10 mA
Noise Figure
NF
0.6
0.7
dB
f = 4 GHz
V
DS
= 3 V
Associated Gain
Ga
11.5
14.0
dB
I
D
= 10 mA
Noise Figure
NF
1.6
1.8
dB
f = 12 GHz
Associated Gain
Ga
8.0
9.5
dB
Output Power at 1 dB Gain
Compression Point
P
o (1 dB)
14.5
dBm
f = 12 GHz
V
DS
= 3 V
I
D
= 30 mA
Thermal Resistance
R
th
190
°C/W
NE71300
Channel to case
450
°C/W
NE71383B
1.88
±
0.3
PACKAGE DIMENSIONS (Unit : mm) [NE71383B]
1.0
±
0.1
0
±
1
±
3
1.
2.
3.
4.
Source
Drain
Source
Gate
4
2
1
4.0 MIN.
4
4
4.0 MIN.
0
1
+
0
相關(guān)PDF資料
PDF描述
NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-L L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-M L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-N L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
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