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參數(shù)資料
| 型號： | NE71383B |
| 廠商： | NEC Corp. |
| 英文描述： | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| 中文描述： | L降至Ku波段低噪聲放大器N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NE71383B |
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
DATA SHEET
Document No. P11691EJ2V0DS00 (2nd edition)
Date Published February 1997 N
Printed in Japan
1996
FEATURES
x
Low noise figure
NF = 0.6 dB TYP. at f = 4 GHz
x
High associated gain
Ga = 14 dB TYP. at f = 4 GHz
x
Gate width: Wg = 280
P
m
x
Gate Length: Lg = 0.3
P
m
ORDERING INFORMATION
PART NUMBER
I
DSS
(mA)
PACKAGE CODE
NE71300-N
20 to 50
00 (CHIP)
NE71300-M
50 to 80
NE71300-L
80 to 120
NE71383B
20 to 120
83B
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
V
DS
V
GSO
V
GDO
I
D
P
tot
5.0
e
5.0
e
6.0
I
DSS
270
400
175
V
V
V
mA
mW
mW
°C
°C
[NE71383B]
[NE71300]
Channel Temperature
Storage Temperature
T
ch
T
stg
e
65 to +175
RECOMMENDED OPERATING CONDITION (T
A
= 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
3
4
V
Drain Current
I
D
10
30
mA
Input Power
P
in
15
dBm
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