- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄363249 > NE72218 (NEC Corp.) C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET PDF資料下載
參數(shù)資料
| 型號(hào)： | NE72218 |
| 廠商： | NEC Corp. |
| 英文描述： | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
| 中文描述： | C到X波段功率放大器C到X波段振蕩N溝道砷化鎵場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | NE72218 |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12750EJ3V0DS00 (3rd edition)
Date Published August 2000 NS CP(K)
Printed in Japan
1997, 2000
The mark
shows major revised points.
GaAs MES FET
NE72218
C to X BAND AMPLIFIER
C to X BAND OSC
N-CHANNEL GaAs MES FET
FEATURES
High power gain in C to X band: G
S
= 4.5 dB TYP. @ f = 12 GHz
Gate length
Gate width
4-pin super minimold package
Tape & reel packaging only available
: L
g
= 0.8
μ
m
: W
g
= 400
μ
m
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE72218-T1
4-pin super minimold
8 mm wide embossed taping
Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
Qty 3 kpcs/reel
NE72218-T2
8 mm wide embossed taping
Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape
Qty 3 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE72218).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
5.0
V
Gate to Source Voltage
V
GS
5.0
V
Drain Current
I
D
I
DSS
mA
Total Power Dissipation
P
tot
250
mW
Channel Temperature
T
ch
125
°
C
Storage Temperature
T
stg
65 to +125
°
C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE72218-T1 | C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
| NE72218-T2 | RES-MF 150 OHM 1/4W 1% |
| NE722S01 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE722S01-T1 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE722S01-T1B1 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE72218-T1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
| NE72218-T2 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
| NE722S01 | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE722S01-T1 | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE722S01-T1B | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。