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參數(shù)資料
| 型號： | NE71300 |
| 廠商： | NEC Corp. |
| 英文描述： | LOW NOISE L TO K-BAND GaAs MESFET |
| 中文描述： | 低噪聲L至K波段GaAs MESFET器件 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | NE71300 |
NE71300 (CHIP)
(Units in
μ
m)
NE71300
PART NUMBER
NE71300
NE71300N
NE71300M
NE71300L
I
DSS
SELECTION (mA)
20 to 120 (Standard)
20 to 50
50 to 80
80 to 120
ORDERING INFORMATION
Note: All dimensions are typical unless otherwise stated.
OUTLINE DIMENSIONS
(Units in
μ
m)
DRAIN
GATE
GATE
SOURCE
SOURCE
DRAIN
123
1
1
7
70
56
48
44
52
18
6
64
76
60
5
5
4
1
450
4
0.500
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
16.000
17.000
18.000
19.000
20.000
21.000
22.000
23.000
24.000
25.000
26.000
0.998
0.994
0.981
0.958
0.927
0.894
0.851
0.816
0.761
0.735
0.711
0.700
0.685
0.681
0.674
0.672
0.675
0.673
0.666
0.665
0.659
0.661
0.657
0.649
0.664
0.673
0.684
-7.5
-14.9
-29.7
-44.1
-58.4
-72.2
-86.0
-99.9
-112.9
-125.6
-138.9
-152.3
-165.9
-178.2
170.5
161.2
152.7
145.5
138.8
133.1
127.0
120.0
114.1
107.4
100.9
94.8
89.6
2.874
2.866
2.828
2.774
2.654
2.610
2.432
2.348
2.223
2.078
2.030
1.895
1.834
1.716
1.621
1.512
1.402
1.328
1.269
1.120
1.111
0.999
0.943
0.886
0.782
0.760
0.669
172.9
165.9
152.1
138.0
124.6
111.3
97.8
86.1
73.2
63.6
51.1
40.4
29.1
17.5
7.8
-3.0
-11.3
-20.8
-32.5
-38.2
-46.8
-53.7
-66.3
-73.6
-80.9
-89.7
-95.0
0.012
0.024
0.048
0.069
0.089
0.105
0.118
0.130
0.130
0.133
0.141
0.144
0.141
0.129
0.126
0.126
0.131
0.134
0.146
0.158
0.148
0.128
0.093
0.093
0.093
0.108
0.126
83.7
79.5
69.4
59.1
49.2
38.8
29.1
19.4
9.2
2.9
-3.9
-12.9
-22.7
-25.5
-29.6
-29.8
-35.3
-35.7
-38.3
-46.6
-61.0
-75.2
-70.9
-63.5
-55.0
-52.3
-52.5
0.658
0.656
0.649
0.637
0.620
0.598
0.564
0.531
0.488
0.460
0.433
0.405
0.376
0.353
0.342
0.341
0.348
0.362
0.379
0.397
0.406
0.405
0.402
0.402
0.410
0.432
0.464
-5.0
-10.0
-19.8
-29.2
-38.4
-47.7
-56.4
-65.3
-72.0
-79.8
-89.1
-99.7
-112.6
-124.9
-138.1
-150.0
-160.0
-169.7
-178.5
173.5
164.1
153.9
144.6
133.9
123.5
112.6
102.8
0.060
0.081
0.137
0.219
0.295
0.372
0.477
0.540
0.717
0.783
0.817
0.871
0.944
1.069
1.147
1.202
1.213
1.219
1.162
1.191
1.311
1.708
2.547
2.738
2.962
2.466
2.221
23.793
20.771
17.702
16.043
14.745
13.955
13.141
12.568
12.330
11.938
11.583
11.192
11.142
9.635
8.767
8.073
7.511
7.138
6.948
5.864
5.414
4.020
3.168
2.557
1.651
1.735
1.014
FREQUENCY
(GHz)
S
11
S
21
S
12
S
22
K
MAG
2
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
NE71300
V
DS
= 4 V, I
D
= 10 mA
TYPICAL SCATTERING PARAMETERS
1
Notes:
1. S-parameters include bond wires.
Gate:
Total 2 wire (s), 2 per bond pad, 0.0298" (756
μ
m) long each wire.
Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739
μ
m) long each wire.
Source:Total 4 wire (s), 2 per side, 0.0186" (472
μ
m) long each wire.
Wire:
0.0007" (17.8
μ
m) Diameter, Gold.
2. Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE71300L | LOW NOISE L TO K-BAND GaAs MESFET |
| NE71300M | LOW NOISE L TO K-BAND GaAs MESFET |
| NE71300N | LOW NOISE L TO K-BAND GaAs MESFET |
| NE71383B | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE713 | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE71300L | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO K-BAND GaAs MESFET |
| NE71300-L | 制造商:NEC 制造商全稱:NEC 功能描述:L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE71300M | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO K-BAND GaAs MESFET |
| NE71300-M | 制造商:NEC 制造商全稱:NEC 功能描述:L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE71300N | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO K-BAND GaAs MESFET |
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