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參數資料
| 型號： | NE71300M |
| 廠商： | NEC Corp. |
| 英文描述： | LOW NOISE L TO K-BAND GaAs MESFET |
| 中文描述： | 低噪聲L至K波段GaAs MESFET器件 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | NE71300M |
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE71300
00 (CHIP)
SYMBOLS
NF
OPT1
UNITS
MIN
TYP
MAX
Optimum Noise Figure, V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
dB
dB
0.6
1.6
0.7
1.8
G
A1
dB
dB
11.5
8.5
14.0
9.5
P
1dB
Output Power at 1 dB Compression, V
DS
= 3 V, I
D
s = 30 mA,
f =12 GHz
dBm
14.5
I
DSS
Saturated Drain Current, V
DS
= 3 V, V
GS
= 0
mA
20
40
120
V
P
Pinch-Off Voltage, V
DS
= 3 V, I
DS
= 0.1 mA
V
-3.5
-1.1
-0.5
g
m
Transconductance, V
DS
= 3 V, I
DS
= 10 mA
mS
μ
A
°
C/W
20
50
I
GSO
Gate to Source Leakage Current at V
GS
= -5 V
1.0
10
R
TH (CH-C)2
Thermal Resistance (Channel to Case)
190
FEATURES
LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
HIGH ASSOCIATED GAIN
G
A
= 9.5 dB TYP at f = 12 GHz
L
G
= 0.3
μ
m, W
G
= 280
μ
m
EPITAXIAL TECHNOLOGY
LOW PHASE NOISE
LOW NOISE
L TO K-BAND GaAs MESFET
NE71300
N
A
A
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
Frequency, f (GHz)
DESCRIPTION
The NE71300 features a low noise figure and high associ-
ated gain through K-band by employing a recessed 0.3 micron
gate and triple epitaxial technology. The active area of the
chip is covered with Si0
2
and Si
3
N
4
for scratch protection as
well as surface stability. This device is suitable for both
amplifier and oscillator applications in the consumer and
industrial markets.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
California Eastern Laboratories
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
1
2
10
20
30
6
9
12
15
18
21
24
0
0.5
1
1.5
2
2.5
3
NF
G
A
相關PDF資料 |
PDF描述 |
|---|---|
| NE71300N | LOW NOISE L TO K-BAND GaAs MESFET |
| NE71383B | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE713 | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE71300-L | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE71300-M | L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NE71300-M | 制造商:NEC 制造商全稱:NEC 功能描述:L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE71300N | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO K-BAND GaAs MESFET |
| NE71300-N | 制造商:NEC 制造商全稱:NEC 功能描述:L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE71383B | 功能描述:MOSFET KU-K BAND MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE720 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:High sensitivity & reliability. |
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