參數(shù)資料
型號： NE71300M
廠商： NEC Corp.
英文描述： LOW NOISE L TO K-BAND GaAs MESFET
中文描述： 低噪聲L至K波段GaAs MESFET器件
文件頁數(shù)： 6/8頁
文件大?。?/td> 91K
代理商： NE71300M
NE71300 (CHIP)
(Units in
μ
m)
NE71300
PART NUMBER
NE71300
NE71300N
NE71300M
NE71300L
I
DSS
SELECTION (mA)
20 to 120 (Standard)
20 to 50
50 to 80
80 to 120
ORDERING INFORMATION
Note: All dimensions are typical unless otherwise stated.
OUTLINE DIMENSIONS
(Units in
μ
m)
DRAIN
GATE
GATE
SOURCE
SOURCE
DRAIN
123
1
1
7
70
56
48
44
52
18
6
64
76
60
5
5
4
1
450
4
0.500
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
16.000
17.000
18.000
19.000
20.000
21.000
22.000
23.000
24.000
25.000
26.000
0.998
0.994
0.981
0.958
0.927
0.894
0.851
0.816
0.761
0.735
0.711
0.700
0.685
0.681
0.674
0.672
0.675
0.673
0.666
0.665
0.659
0.661
0.657
0.649
0.664
0.673
0.684
-7.5
-14.9
-29.7
-44.1
-58.4
-72.2
-86.0
-99.9
-112.9
-125.6
-138.9
-152.3
-165.9
-178.2
170.5
161.2
152.7
145.5
138.8
133.1
127.0
120.0
114.1
107.4
100.9
94.8
89.6
2.874
2.866
2.828
2.774
2.654
2.610
2.432
2.348
2.223
2.078
2.030
1.895
1.834
1.716
1.621
1.512
1.402
1.328
1.269
1.120
1.111
0.999
0.943
0.886
0.782
0.760
0.669
172.9
165.9
152.1
138.0
124.6
111.3
97.8
86.1
73.2
63.6
51.1
40.4
29.1
17.5
7.8
-3.0
-11.3
-20.8
-32.5
-38.2
-46.8
-53.7
-66.3
-73.6
-80.9
-89.7
-95.0
0.012
0.024
0.048
0.069
0.089
0.105
0.118
0.130
0.130
0.133
0.141
0.144
0.141
0.129
0.126
0.126
0.131
0.134
0.146
0.158
0.148
0.128
0.093
0.093
0.093
0.108
0.126
83.7
79.5
69.4
59.1
49.2
38.8
29.1
19.4
9.2
2.9
-3.9
-12.9
-22.7
-25.5
-29.6
-29.8
-35.3
-35.7
-38.3
-46.6
-61.0
-75.2
-70.9
-63.5
-55.0
-52.3
-52.5
0.658
0.656
0.649
0.637
0.620
0.598
0.564
0.531
0.488
0.460
0.433
0.405
0.376
0.353
0.342
0.341
0.348
0.362
0.379
0.397
0.406
0.405
0.402
0.402
0.410
0.432
0.464
-5.0
-10.0
-19.8
-29.2
-38.4
-47.7
-56.4
-65.3
-72.0
-79.8
-89.1
-99.7
-112.6
-124.9
-138.1
-150.0
-160.0
-169.7
-178.5
173.5
164.1
153.9
144.6
133.9
123.5
112.6
102.8
0.060
0.081
0.137
0.219
0.295
0.372
0.477
0.540
0.717
0.783
0.817
0.871
0.944
1.069
1.147
1.202
1.213
1.219
1.162
1.191
1.311
1.708
2.547
2.738
2.962
2.466
2.221
23.793
20.771
17.702
16.043
14.745
13.955
13.141
12.568
12.330
11.938
11.583
11.192
11.142
9.635
8.767
8.073
7.511
7.138
6.948
5.864
5.414
4.020
3.168
2.557
1.651
1.735
1.014
FREQUENCY
(GHz)
S
11
S
21
S
12
S
22
K
MAG
2
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
NE71300
V
DS
= 4 V, I
D
= 10 mA
TYPICAL SCATTERING PARAMETERS
1
Notes:
1. S-parameters include bond wires.
Gate:
Total 2 wire (s), 2 per bond pad, 0.0298" (756
μ
m) long each wire.
Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739
μ
m) long each wire.
Source:Total 4 wire (s), 2 per side, 0.0186" (472
μ
m) long each wire.
Wire:
0.0007" (17.8
μ
m) Diameter, Gold.
2. Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關PDF資料
PDF描述
NE71300N LOW NOISE L TO K-BAND GaAs MESFET
NE71383B L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-L L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-M L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
相關代理商/技術參數(shù)
參數(shù)描述
NE71300-M 制造商:NEC 制造商全稱:NEC 功能描述:L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300N 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO K-BAND GaAs MESFET
NE71300-N 制造商:NEC 制造商全稱:NEC 功能描述:L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71383B 功能描述:MOSFET KU-K BAND MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE720 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:High sensitivity & reliability.
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