參數(shù)資料
型號(hào): NE698M01
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
中文描述: npn型外延硅晶體管的微波HIFH,增益放大
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 60K
代理商: NE698M01
NE698M01
FREQUENCY
f (MHz)
100
250
400
600
800
1000
1200
1400
1600
1800
2000
2500
3000
3500
4000
4500
5000
S
11
S
21
S
12
S
22
K MAG
1
(dB)
-2.7 0.21 26.7
-8.2 0.11
-13.0 0.12
-19.5 0.16
-26.0 0.21
-32.5 0.27
-39.0 0.31
-45.5 0.37
-52.0 0.43
-58.4 0.50
-64.7 0.58
-80.0 0.84
-94.4 1.23
-107.6 1.56
-119.2 1.25
-129.3 0.83
-138.1 0.58
MAG
0.963
0.962
0.953
0.934
0.907
0.874
0.838
0.799
0.758
0.715
0.668
0.587
0.533
0.518
0.532
0.561
0.592
ANG
-3.9
-10.0
-16.1
-24.2
-32.4
-40.6
-49.2
-57.6
-66.2
-75.3
-84.6
-107.1
-131.1
-154.4
-175.9
165.6
149.7
MAG
2.863
2.880
2.893
2.886
2.893
2.852
2.823
2.758
2.685
2.629
2.573
2.279
2.035
1.772
1.534
1.324
1.146
ANG
171.7
167.7
161.3
152.6
143.7
134.7
126.0
117.5
108.9
100.5
92.0
72.5
54.6
38.0
23.4
10.7
-0.5
MAG
0.006
0.015
0.024
0.035
0.045
0.054
0.061
0.066
0.070
0.071
0.071
0.063
0.050
0.042
0.052
0.077
0.108
ANG
82.8
80.1
75.5
68.8
61.8
55.1
48.8
42.6
36.6
31.1
26.1
17.7
19.5
38.7
63.3
72.0
71.1
MAG
0.987
0.989
0.984
0.973
0.957
0.938
0.919
0.897
0.875
0.853
0.834
0.797
0.780
0.785
0.800
0.821
0.841
ANG
22.8
20.8
19.2
18.1
17.3
16.7
16.2
15.9
15.7
15.6
15.6
13.2
11.9
11.7
12.3
10.3
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
V
CE
= 2 V, Ic = 1 mA
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關(guān)PDF資料
PDF描述
NE698M01-T1 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
NE71300 LOW NOISE L TO K-BAND GaAs MESFET
NE71300L LOW NOISE L TO K-BAND GaAs MESFET
NE71300M LOW NOISE L TO K-BAND GaAs MESFET
NE71300N LOW NOISE L TO K-BAND GaAs MESFET
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