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參數(shù)資料
| 型號： | NE696M01 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 105K |
| 代理商： | NE696M01 |
NE696M01
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
HIGH f
T
:
14 GHz TYP at 3 V, 10 mA
LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
HIGH GAIN:
|S
21E
|
2
= 14 dB TYP at 2 GHz
6 PIN SMALL MINI MOLD PACKAGE
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M01
DESCRIPTION
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
California Eastern Laboratories
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
PART NUMBER
PACKAGE OUTLINE
NE696M01
M01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
μ
A
μ
A
0.1
0.1
160
80
120
14
0.15
14
1.6
GHz
pF
dB
dB
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes:
1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.15
0.9
±
0.1
0.7
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
T
TOP VIEW
SIDE VIEW
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE698M01 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION |
| NE698M01-T1 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION |
| NE71300 | LOW NOISE L TO K-BAND GaAs MESFET |
| NE71300L | LOW NOISE L TO K-BAND GaAs MESFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE696M01-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE696M01-T1 | 功能描述:射頻雙極小信號晶體管 DISC BY CEL 1/02 M01 NPN HIGH FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE696M01-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE6970-SM | 制造商:Panasonic Industrial Company 功能描述:SERVICE MANUAL |
| NE698M01 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION |
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