參數(shù)資料
型號(hào)： NE681M23
廠商： NEC Corp.
英文描述： NPN SILICON TRANSISTOR
中文描述： NPN硅晶體管
文件頁(yè)數(shù)： 6/20頁(yè)
文件大小： 218K
代理商： NE681M23
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
V
CE
= 8 V, I
C
= 20 mA
100
200
500
1000
1500
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
100
200
500
1000
1500
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.827
0.809
0.742
0.701
0.689
0.686
0.687
0.693
0.699
0.708
0.717
0.721
0.725
0.726
0.724
0.722
-20.8
-49.5
-101.1
-139.2
-156.6
-167.2
179.8
172.2
166.6
162.1
157.0
151.7
145.5
137.6
131.2
123.6
19.513
17.981
12.631
7.498
5.182
3.959
2.687
2.048
1.662
1.431
1.250
1.105
0.989
0.868
0.773
0.673
163.9
151.0
123.0
101.5
90.4
82.0
69.7
59.1
49.8
41.1
31.7
23.3
14.2
5.9
-2.0
-9.7
0.012
0.022
0.038
0.047
0.049
0.053
0.061
0.071
0.081
0.096
0.116
0.125
0.146
0.169
0.179
0.192
88.3
65.5
42.2
36.7
33.0
35.0
45.9
48.7
53.2
57.0
56.6
56.9
55.9
54.9
51.9
49.0
0.964
0.894
0.691
0.536
0.483
0.461
0.447
0.449
0.454
0.473
0.490
0.519
0.549
0.582
0.621 -104.8
0.663 -114.1
-7.0
-16.8
-27.4
-29.0
-28.6
-29.2
-33.6
-40.6
-48.0
-57.1
-66.8
-76.0
-86.4
-96.0
0.03
0.13
0.28
0.47
0.71
0.88
1.11
1.21
1.27
1.15
0.99
0.97
0.83
0.74
0.71
0.69
32.1
29.1
25.2
22.0
20.2
18.7
14.4
11.8
10.0
9.4
10.3
9.5
8.3
7.1
6.4
5.4
0.665
0.664
0.663
0.663
0.667
0.669
0.676
0.686
0.693
0.705
0.719
0.727
0.726
0.733
0.732
0.728
-47.0
-85.3
-135.8
-161.1
-171.7
-178.4
172.7
167.3
162.6
159.0
154.5
149.4
143.5
135.9
129.4
122.1
38.130
31.089
16.975
9.066
6.113
4.627
3.112
2.361
1.913
1.643
1.433
1.266
1.134
1.001
0.897
0.787
154.1
135.9
108.9
93.2
84.9
78.3
67.9
58.6
50.1
42.2
33.3
25.4
16.7
8.4
0.5
-7.1
0.011
0.017
0.025
0.028
0.036
0.042
0.054
0.071
0.086
0.103
0.123
0.133
0.153
0.171
0.185
0.197
90.0
70.3
45.4
49.5
49.6
53.2
59.2
62.6
63.5
65.1
63.2
60.6
60.4
57.3
53.9
51.8
0.885
0.753
0.504
0.404
0.377
0.369
0.361
0.362
0.372
0.386
0.405
0.433
0.464
0.500
0.546 -103.2
0.587 -112.6
-15.0
-26.0
-30.8
-27.0
-26.3
-26.6
-31.6
-38.5
-45.8
-55.5
-65.0
-74.2
-84.5
-94.4
0.01
0.12
0.45
0.82
0.97
1.10
1.25
1.21
1.19
1.08
0.94
0.91
0.84
0.76
0.71
0.72
35.4
32.6
28.3
25.1
22.3
18.5
14.6
12.5
10.8
10.3
10.7
9.8
8.7
7.7
6.9
6.0
S-Parameters include bond wires.
BASE: Total 1 wire (s), 1 per bond pad, 0.0122" (309
μ
m) long each wire.
COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.008" (203
μ
m) long each wire.
EMITTER: Total 2 wire (s), 1 per side, 0.0194" (494
μ
m) long each wire.
WIRE: 0.0007" (17.7
μ
m) dia., gold.
Note:
1. Gain Calculations:
|S
21
|
|S
12
|
NE68100
V
CE
= 8 V, I
C
= 7 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
Coordinates in Ohms
Frequency in GHz
(V
CE
= 8 V, I
C
= 7 mA)
NE681 SERIES
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
10
25
50
100
S
11
17 GHz
S
11
0.1 GHz
S
22
17 GHz
S
22
0.1 GHz
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
20
15
10
0.5
0.4
0.3
0.2
S
21
0.1
S
12
17 GHz
S
12
0.1 GHz
17 GHz
S
21
0.1 GHz
S
2125
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