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參數(shù)資料
| 型號： | NE681M23 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大小： | 218K |
| 代理商： | NE681M23 |
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
500
1.24
9.26
0.73
42
1.70
800
1000
1.67
2.18
6.95
6.02
0.74
0.70
72
90
1.01
0.78
V
CE
= 2.5 V, I
C
= 1 mA
500
800
0.97
1.19
13.86
9.12
0.66
0.59
43
48
0.46
0.35
FREQ.
(MHz)
V
CE
= 2.5 V, I
C
= 0.3 mA
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
500
1.48
10.23
0.74
43
1.35
800
1.90
10.15
0.72
79
0.92
1000
1500
V
CE
= 2.5 V, I
C
= 1 mA
2.15
2.70
9.00
4.46
0.69
0.66
99
126
0.60
0.38
NE68130
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
NE68100
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
FREQ.
(MHz)
V
CE
= 8 V, I
C
= 7 mA
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
500
1.3
26.42
0.20
91
0.20
1000
2000
4000
1.45
2.1
3.25
20.54
14.41
7.76
0.20
0.22
0.42
148
178
-115
0.21
0.51
0.85
NE68119
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Operating Junction
Temperature
Storage Temperature
UNITS
V
V
V
mA
RATINGS
20
10
1.5
65
°
C
°
C
150
2
T
STG
-55 to +150
3
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. T
J
for NE68135 and NE68100 is 200
°
C.
3. Maximum storage temperature for the NE68135 is
-65 to +150
°
C.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
NE681 SERIES
V
CE
= 2.5 V, I
C
= 3 mA
500
1.00
17.28
0.47
44
0.25
800
1000
1500
2000
2500
1.06
1.16
1.46
1.80
2.15
14.35
12.69
9.50
7.70
6.03
0.44
0.43
0.39
0.35
0.35
83
100
130
177
-177
0.21
0.17
0.12
0.11
0.09
V
CE
= 8 V, I
C
= 7mA
500
1.30
20.34
0.29
50
0.27
1000
2000
3000
4000
1.40
1.80
2.50
3.60
13.96
8.56
5.64
4.50
0.25
0.25
0.48
0.67
84
155
-167
-135
0.18
0.16
0.10
0.20
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
1000
1.1
17.33
0.28
71
0.22
2000
4000
1.6
3.4
13.60
9.25
0.37
0.51
160
-139
0.15
0.27
NE68135
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
V
CE
= 2.5 V, I
C
= 0.3 mA
V
CE
= 2.5 V, I
C
= 3 mA
500
800
1000
1500
2000
V
CE
= 3 V, I
C
= 5 mA
500
800
1000
1500
2000
2500
V
CE
= 8 V, I
C
= 7 mA
500
800
1000
1500
2000
2500
3000
1000
1.31
10.09
0.56
89
0.30
1500
1.71
7.99
0.50
131
0.16
0.92
1.02
1.11
1.42
1.82
17.19
14.23
12.78
10.30
8.24
0.49
0.40
0.38
0.39
0.36
39
68
87
134
165
0.28
0.17
0.14
0.08
0.11
1.00
1.10
1.19
1.40
1.70
2.05
19.00
15.57
13.91
11.25
9.08
7.62
0.37
0.31
0.30
0.33
0.32
0.36
43
71
89
139
166
-163
0.20
0.15
0.13
0.09
0.11
0.13
1.10
1.20
1.30
1.50
1.77
2.10
2.40
20.30
16.82
15.10
12.35
10.21
8.85
7.86
0.36
0.28
0.28
0.28
0.28
0.33 -166
0.44
39
64
81
130
158
0.22
0.16
0.14
0.11
0.12
0.14
0.16
-141
V
CE
= 8 V, I
C
= 7 mA
500
800
1000
1500
2000
2500
1.10
1.26
1.40
1.80
2.22
2.75
14.69
12.73
11.29
7.40
6.14
4.89
0.65
0.60
0.56
0.53
0.47
0.49
45
80
99
123
166
-166
0.42
0.30
0.24
0.17
0.12
0.08
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PDF描述 |
|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68330 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) |
| NE68333 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5A I(C) |
| NE68337 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68339 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5MA I(C) | SOT-143 |
| NE68339B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5MA I(C) | SOT-143 |
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