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參數(shù)資料
| 型號(hào)： | NE686 |
| 廠商： | NEC Corp. |
| 英文描述： | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 表面貼裝NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 140K |
| 代理商： | NE686 |
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
The NE686 series of NPN epitaxial silicon transistors are
designed for low voltage/low current, amplifier and oscillator
applications. NE686's high f
T
make it an excellent choice for
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
from this datasheet are not
The following part numbers
|S
21E
|
2
= 11 dB @ 1 V, 5 mA, 2 GHz
LOW NOISE:
1.5 dB AT 2.0 GHz
AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
The following part numbers
The following part numbers
|S
21E
|
2
= 12 dB @ 2 V, 7 mA, 2 GHz
The following part numbers
The following part numbers
recommended for new design.
DESCRIPTION
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
NE68639
NE68639R
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE686
SERIES
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
18 (SOT 343 STYLE)
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW
≤
350
μ
s, duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 15 GHz
HIGH INSERTION POWER GAIN:
NE68618
2SC5180
18
NE68619
2SC5181
19
NE68630
2SC5179
30
NE68633
2SC5177
33
NE68639/39R
2SC5178/78R
39/39R
SYMBOLS
f
T
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 7 mA, f = 2.0 GHz
GHz
12 15.5
10
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 5 mA, f = 2.0 GHz
GHz
10
13
8.5
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.5
2.0
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.5
2.0
Insertion Power Gain at
V
CE
= 2V, I
C
=7 mA, f = 2.0 GHz
dB
10
12
8
Insertion Power Gain at
V
CE
= 1V, I
C
=5 mA, f = 2.0 GHz
dB
8.5
11
7
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 7 mA
70
140
70
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
nA
100
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
nA
100
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
pF
0.3
0.5
Total Power Dissipation
mW
30
Thermal Resistance
(Junction to Ambient)
°
C/W
833
Thermal Resistance(Junction to Case)
°
C/W
13
7.5
9
10
13
10.5 13.5
f
T
12
7
8.5
8.5
12
8.5
12
NF
MIN
1.5
2.0
1.5
2.0
1.5
2.0
1.5
2.0
NF
MIN
1.5
2.0
1.5
2.0
1.5
2.0
1.5
2.0
|S
21e
|
2
10.5
7.5
9
7.5
9
9.5
11.5
|S
21e
|
2
9
7
8.5
7
8.5
7.5
10.5
h
FE
140
70
140
70
140
70
140
I
CBO
100
100
100
100
I
EBO
100
100
100
100
C
RE4
0.4
0.6
30
0.4
0.6
30
0.5
0.6
30
0.3
0.5
30
P
T
R
TH(J-A)
1250
833
625
625
R
TH(J-C)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE68630-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68633-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68618-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68619-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68639R-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68618 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-343R |
| NE68618-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68618-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68618-T1-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68619 | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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