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參數(shù)資料
| 型號(hào)： | NE681M23 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 218K |
| 代理商： | NE681M23 |
NE681 SERIES
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Noise Figure
at V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
NE68133
2SC3583
33
MIN
TYP
NE68135
2SC3604
35
MIN
TYP
NE68139/39R
2SC4094
39
MIN
TYP MAX
9.0
SYMBOLS
f
T
UNITS
GHz
GHz
dB
dB
MAX
MAX
9.0
9.0
NF
1.2
2
1.2
2
f = 2 GHz
1.6
2.3
G
NF
Associated Gain at V
CE
= 8 V, I
C
= 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
13
13.5
12
|S
21E
|
2
Insertion Power Gain at V
CE
= 8 V, I
C
= 20 mA,
f = 1 GHz
f = 2 GHz
dB
dB
11
12.5
7
15
8.5
9
11
h
FE
Forward Current Gain
2
at V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0 mA
50
100
250
1.0
50
100
250
1.0
50
100
200
1.0
I
CBO
μ
A
I
EBO
C
RE3
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
μ
A
1.0
1.0
1.0
pF
°
C/W
mW
0.35
0.9
625
200
0.2
0.7
590
295
0.25
0.8
625
200
R
TH (J-A)
P
T
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Noise Figure
at V
CE
= 8 V, I
C
= 7 mA,
f = 1 GHz
f = 2 GHz
Associated Gain at V
CE
= 8 V, I
C
= 7 mA,
f = 1 GHz
f = 2 GHz
Insertion Power Gain at
V
CE
= 8 V, I
C
= 20 mA, f = 1 GHz
NE68100
NE68118
2SC5012
18
MIN
TYP
NE68119
2SC5007
19
MIN
TYP
NE68130
2SC4227
30
MIN
TYP
00 (CHIP)
SYMBOLS
f
T
UNITS MIN TYP
MAX
MAX
MAX
MAX
GHz
GHz
9.0
9.0
7.0
7.0
NF
dB
dB
1.2
2.5
1.4
1.8
1.5
1.6
1.6
2.3
G
NF
dB
dB
14
14
10
13.5
9
12
|S
21E
|
2
dB
dB
17
11
13
15
9
14
8
13
7.5
f = 2 GHz
9
h
FE
Forward Current Gain
2
at
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at
V
CB
= 10 V, I
E
= 0 mA
Emitter Cutoff Current at
V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Thermal Resistance (Junction to Ambient)
°
C/W
Total Power Dissipation
50
100
250
50
100
250
80
160
40
240
I
CBO
μ
A
1.0
1.0
1.0
1.0
I
EBO
μ
A
1.0
1.0
1.0
1.0
C
RE3
pF
pF
0.45
0.9
0.45
0.9
0.2
0.7
80
600
0.25
0.8
833
150
R
TH (J-A)
P
T
1000
100
833
150
mW
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW
≤
350 ms, duty cycle
≤
2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
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|---|---|
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| NE68333 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5A I(C) |
| NE68337 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
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| NE68339B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5MA I(C) | SOT-143 |
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