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參數(shù)資料
| 型號： | NE681M23 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 218K |
| 代理商： | NE681M23 |
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NE681 SERIES
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Ambient Temperature, T
A
(
°
C)
NE68133
NE68135
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1 2 3 5 7 10 20 30 50
Collector to Base Voltage, V
CB
(V)
V
CE
= 8 V
500
300
200
100
70
50
30
20
10
1 2 3 5 7 10 20 30 50
G
T
V
CE
= 8 V
50
30
20
10
7
5
3
2
1
1 2 3 5 7 10 20 30 50
Collector Current, I
C
(mA)
N
Collector Current, I
C
(mA)
V
CE
= 8 V
f = 2 GHz
3.0
2.5
2.0
1.5
1.0
0.5
0
1 2 3 5 7 10 20 30 50
T
T
C
O
p
NE68133
NE68135
400
300
200
100
0
0 50 100 150 200
DC POWER DERATING CURVES
COLLECTOR TO BASE CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
NE68133
NOISE FIGURE
vs. COLLECTOR CURRENT
NE68100 & NE68135
NOISE FIGURE
vs. COLLECTOR CURRENT
N
V
CE
= 8 V
f = 1 GHz
3.0
2.5
2.0
1.5
1.0
0.5
0
1 2 3 5 7 10 20 30 50
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
D
F
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|---|---|
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| NE68630-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68330 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) |
| NE68333 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5A I(C) |
| NE68337 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68339 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5MA I(C) | SOT-143 |
| NE68339B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5MA I(C) | SOT-143 |
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