參數(shù)資料
型號： NE664M04-T2
廠商： NEC Corp.
英文描述： MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 中功率NPN硅高頻晶體管
文件頁數(shù)： 5/9頁
文件大?。?/td> 128K
代理商： NE664M04-T2
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
V
CE
= 3.2 V, f = 0.9 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
-15
-10
-5
0
5
10
15
G
P
I
C
P
out
η
c
0
50
100
150
200
250
300
V
CE
= 3.2 V, f = 2.4 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
-5
0
5
10
15
20
25
I
C
P
out
η
c
0
50
100
150
200
250
300
G
P
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
0
-10
G
P
I
C
P
out
η
c
0
50
100
150
200
250
300
-5
0
5
10
15
20
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
-10
G
P
I
C
P
out
η
c
0
50
100
150
200
250
300
-5
0
5
10
15
20
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
G
P
I
C
P
out
η
c
0
-10
-5
0
5
10
15
20
0
50
100
150
200
250
300
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
G
P
I
C
P
out
η
c
0
-10
-5
0
5
10
15
20
0
50
100
150
200
250
300
Input Power, P
in
(dBm)
O
o
P
p
Input Power, P
in
(dBm)
O
o
P
p
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
C
C
C
η
C
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
C
C
C
η
C
Input Power, P
in
(dBm)
O
o
P
p
Input Power, P
in
(dBm)
O
o
P
p
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
C
C
C
η
C
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
C
C
C
η
C
Input Power, P
in
(dBm)
O
o
P
p
Input Power, P
in
(dBm)
O
o
P
p
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
C
C
C
η
C
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
C
C
C
η
C
相關(guān)PDF資料
PDF描述
NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE677M04-T2 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68035 NONLINEAR MODEL
NE68119 NONLINEAR MODEL
NE681 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE664M04-T2-A 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE66719 制造商:CEL 制造商全稱:CEL 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE66719-T1 制造商:CEL 制造商全稱:CEL 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE67300 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
NE67383 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
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