參數(shù)資料
      型號(hào): NE664M04-T2
      廠商: NEC Corp.
      英文描述: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
      中文描述: 中功率NPN硅高頻晶體管
      文件頁(yè)數(shù): 3/9頁(yè)
      文件大小: 128K
      代理商: NE664M04-T2
      NE664M04
      TYPICAL PERFORMANCE CURVES
      (T
      A
      = 25
      °
      C)
      Ambient Temperature, T
      A
      (
      o
      C)
      T
      t
      TOTAL POWER DISSIPATION vs.
      AMBIENT TEMPERATURE
      Collector to Emitter Voltage, V
      CE
      (V)
      COLLECTOR CURRENT vs.
      COLLECTOR TO EMITTER VOLTAGE
      Collector to Base Voltage, V
      CB
      (V)
      R
      r
      (
      REVERSE TRANSFER CAPACITANCE vs.
      COLLECTOR TO BASE VOLTAGE
      C
      C
      Base to Emitter Voltage, V
      BE
      (V)
      C
      C
      COLLECTOR CURRENT vs.
      BASE TO EMITTER VOLTAGE
      Collector Current, I
      C
      (mA)
      D
      F
      DC CURRENT GAIN vs.
      COLLECTOR CURRENT
      Mounted on Polyimide PCB
      (38 x 38 mm, t = 0.4 mm)
      200
      735
      1000
      600
      800
      400
      0
      25
      50
      75
      100
      125
      150
      Stand alone device
      in free air
      f = 1 MHz
      2.0
      1.5
      1.0
      0.5
      0
      1
      2
      3
      4
      5
      1000
      100
      10
      1
      0.1
      0.01
      0.5
      0.6
      0.7
      0.8
      0.9
      1.0
      0.001
      V
      CE
      = 3 V
      I
      B
      : 0.5 mA step
      I
      B
      = 0.5 mA
      5
      450
      400
      350
      300
      250
      200
      150
      100
      50
      0
      1
      2
      3
      4
      6
      7 mA
      6 mA
      1 mA
      2 mA
      3 mA
      4 mA
      5 mA
      1000
      100
      10
      1
      10
      100
      1000
      V
      CE
      = 3 V
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