參數(shù)資料
型號: NE664M04-T2
廠商: NEC Corp.
英文描述: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述: 中功率NPN硅高頻晶體管
文件頁數(shù): 4/9頁
文件大?。?/td> 128K
代理商: NE664M04-T2
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
Collector Current, I
C
(mA)
G
T
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Frequency, f (Hz)
I
2
I
2
M
M
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
I
2
I
2
M
M
Collector Current, I
C
(mA)
I
2
I
2
M
M
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
I
2
I
2
M
M
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 0.5 GHz
25
20
15
10
5
0
1
10
100
1000
V
CE
= 3 V
I
C
= 100 mA
35
30
25
20
15
10
5
0
10
1
MSG
MAG
|
S
21e
|
2
V
CE
= 3 V
f = 1 GHz
20
15
10
5
0
1
10
100
1000
MSG
MAG
|
S
21e
|
2
V
CE
= 3 V
f = 2 GHz
20
15
10
5
0
1
10
100
1000
MSG
MAG
|
S
21e
|
2
V
CE
= 3 V
f = 2.5 GHz
10
100
1000
1
0
5
10
15
20
|
S
21e
|
2
MSG
MAG
相關PDF資料
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NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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