參數(shù)資料
型號: NE425S01-T1
廠商: NEC Corp.
英文描述: C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
中文描述: C到Ku波段超低噪聲放大器N溝道黃建忠場效應管
文件頁數(shù): 5/12頁
文件大小: 57K
代理商: NE425S01-T1
NE425S01
5
S-PARAMETERS
MAG. AND ANG.
V
DS
= 2 V, I
D
= 10 mA
FREQUENCY
MHz
S
11
S
21
S
12
S
22
MAG.
ANG.
(deg.)
–26.7
–29.0
–38.8
–44.6
–51.1
–56.7
–60.6
–63.7
–70.5
–76.1
–82.9
–91.9
–101.6
–111.7
–122.5
–132.5
–142.0
–151.0
–159.2
–168.7
179.9
167.1
152.5
138.9
128.1
120.0
113.2
109.4
104.0
97.3
89.6
82.2
75.3
MAG.
ANG.
(deg.)
151.5
147.2
137.3
131.3
125.0
117.6
111.6
105.7
99.8
93.7
87.2
80.0
72.6
65.3
58.1
51.1
44.3
38.3
32.5
26.6
20.6
13.4
MAG.
ANG.
(deg.)
74.5
73.3
65.3
62.7
59.3
53.7
50.8
48.4
45.1
41.7
38.6
33.4
28.8
24.2
20.5
16.0
11.7
MAG.
ANG.
(deg.)
–18.9
–26.8
–32.7
–37.1
–40.9
–45.3
–48.5
–51.7
–55.4
–58.9
–63.4
–69.3
–75.7
–83.0
–92.1
–101.2
–108.5
–114.8
–120.0
–124.7
–133.2
–151.1
175.2
143.2
120.6
110.2
106.0
102.0
100.0
94.1
88.4
82.5
76.2
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
.999
.994
.952
.939
.926
.866
.821
.783
.788
.755
.721
.679
.634
.595
.563
.537
.505
.478
.451
.421
.415
.424
.448
.477
.508
.530
.554
.579
.595
.625
.652
.688
.709
4.914
4.748
4.770
4.654
4.547
4.413
4.285
4.192
4.207
4.219
4.231
4.234
4.207
4.136
4.059
3.958
3.834
3.735
3.647
3.609
3.589
3.556
3.473
3.331
3.161
3.006
2.913
2.822
2.753
2.685
2.601
2.505
2.372
.029
.036
.044
.050
.055
.059
.064
.069
.075
.079
.085
.092
.095
.098
.104
.105
.108
.109
.110
.112
.115
.116
.122
.121
.118
.115
.118
.118
.120
.121
.123
.124
.122
.444
.507
.472
.485
.490
.477
.474
.465
.439
.421
.401
.361
.322
.288
.256
.229
.208
.187
.164
.147
.124
.108
.103
.126
.157
.184
.214
.235
.264
.297
.317
.345
.383
8.6
5.3
1.9
.3
–3.3
–7.9
–13.1
–15.9
–18.0
–18.9
–19.9
–22.0
–25.5
–30.4
–34.2
–37.3
5.5
–1.8
–8.5
–14.2
–19.4
–24.6
–30.6
–37.0
–43.8
–50.8
–57.2
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相關代理商/技術參數(shù)
參數(shù)描述
NE425S01-T1B 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
NE425S01-T1B-A 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA 4-Pin Case S01 T/R
NE429M01 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE429M01-T1 功能描述:MOSFET Super Lo Noise HJFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE434S01 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET