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參數(shù)資料
| 型號： | NE325S01-T1B |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 60K |
| 代理商： | NE325S01-T1B |
NE325S01
9
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 C or below,
Reflow time: 30 seconds or below (210 C or higher),
Number of reflow process: 1, Exposure limit
Note
: None
IR30-00
Partial heating method
Terminal temperature: 230 C or below,
Flow time: 10 seconds or below,
Exposure limit
Note
: None
Note
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Caution Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE325S01-T1B-A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA AlGaAs HJFET T/R 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA T/R |
| NE32684A | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32684AS | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32684A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP |
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