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參數(shù)資料
| 型號： | NE325S01-T1B |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 60K |
| 代理商： | NE325S01-T1B |
NE325S01
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
0.5
10
μ
A
V
GS
= –3 V
Saturated Drain Current
I
DSS
20
60
90
mA
V
DS
= 2 V, V
GS
= 0 V
Gate to Source Cutoff Voltage
V
GS(off)
–0.2
–0.7
–2.0
V
V
DS
= 2 V, I
D
= 100
μ
A
Transconductance
g
m
45
60
mS
V
DS
= 2V, I
D
= 10 mA
Noise Figure
NF
0.45
0.55
dB
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Associated Gain
G
a
11.0
12.5
dB
TYPICAL CHARACTERISTICS (T
A
= 25 C)
250
200
150
100
50
0
50
100
150
200
250
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
t
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
100
80
60
40
20
0
3.0
1.5
I
D
V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
60
40
20
0
–2.0
–1.0
0
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
I
D
f - Frequency - GHz
M
M
|
2
|
2
V
DS
= 2 V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
20
16
12
8
4
1
30
2
4
20
6
8 10
14
V
DS
= 2 V
I
D
= 10 mA
MSG.
MAG.
|S
21S
|
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE325S01-T1B-A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA AlGaAs HJFET T/R 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA T/R |
| NE32684A | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32684AS | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32684A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP |
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