參數(shù)資料
型號: NE24283B
廠商: NEC Corp.
英文描述: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
中文描述: 超低噪音贗形黃建忠場效應(yīng)管(空間限定)
文件頁數(shù): 4/4頁
文件大?。?/td> 39K
代理商: NE24283B
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 83B
PART
NUMBER
AVAILABILITY
PACKAGE
OUTLINE
NE24283B
Bulk
83B
ORDERING INFORMATION
NE24283B
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -7/98
1.45 MAX
0.1 -0.03
4.0 MIN (ALL LEADS)
0.5
±
0.1
1.88
±
0.3
1.88
±
0.3
1.0
±
0.1
S
D
G
S
1. Source
2. Drain
3. Source
4. Gate
相關(guān)PDF資料
PDF描述
NE25118 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25118-T1 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25137 GENERAL PURPOSE DUAL GATE GAAS MESFET
NE25139 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139-T1 GENERAL PURPOSE DUAL-GATE GaAS MESFET
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