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參數(shù)資料
| 型號(hào)： | NE25139-T1 |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| 中文描述： | 一般用途的雙柵GaAs MESFET |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | NE25139-T1 |
PART NUMBER
PACKAGE OUTLINE
NE25139
39
SYMBOL
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
μ
A
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
μ
A
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
μ
A
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
dB
1.1
2.5
G
PS
dB
16
20
BV
DSX
V
13
5
I
DSS
mA
20
40
V
G1S (OFF)
V
-3.5
V
G2S (OFF)
V
μ
A
μ
A
-3.5
I
G1SS
I
G2SS
|Y
FS
|
10
10
mS
18
25
35
C
ISS
pF
0.5
1.0
1.5
C
RSS
pF
0.02
0.03
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
LOW C
RSS
:
0.02 pF (TYP)
HIGH GPS:
20 dB (TYP) AT 900 MHz
L
G1
= 1.0
μ
m, L
G2
= 1.5
μ
m, W
G
= 400
μ
m
ION IMPLANTATION
LOW NF:
1.1 dB TYP AT 900 MHz
AVAILABLE IN TAPE & REEL OR BULK
P
P
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
N
)
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
California Eastern Laboratories
20
0
10
0 5 10
0
10
G
PS
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
I
D
= 10 mA
f = 900 MHz
5
NF
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