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參數(shù)資料
| 型號(hào)： | NE24283B |
| 廠商： | NEC Corp. |
| 英文描述： | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) |
| 中文描述： | 超低噪音贗形黃建忠場(chǎng)效應(yīng)管（空間限定） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | NE24283B |
1
10
20
30
1.4
1.2
1
0.8
0.6
0.4
0.2
0
24
21
18
15
12
9
6
3
G
A
NF
FEATURES
VERY LOW NOISE FIGURE:
0.6 dB TYP at 12 GHz
HIGH ASSOCIATED GAIN:
11.0 dB TYP at 12 GHz
GATE LENGTH:
0.25
μ
m
GATE WIDTH:
200
μ
m
HERMETIC METAL/CERAMIC PACKAGE
DESCRIPTION
NE24283B
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
(SPACE QUALIFIED)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
Frequency, f (GHz)
O
O
A
A
The NE24283B is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in a solder sealed
hermetic, metal ceramic package for high reliability in space
applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
PART NUMBER
PACKAGE OUTLINE
NE24283B
83B
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
OPT1
Optimum Noise Figure at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
dB
dB
0.35
0.6
0.7
G
A1
Associated Gain at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
dB
dB
16.0
11.0
10.0
P
1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
dBm
dBm
9.5
11.0
G
1dB
Gain at P
1dB
, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
dB
dB
11.8
12.8
I
DSS
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
mA
15
40
70
V
P
Pinch-off Voltage at V
DS
= 2 V, I
DS
= 100
μ
A
V
-2.0
-0.8
-0.2
g
m
Transconductance at V
DS
= 2 V, I
DS
= 10 mA
mS
45
60
I
GSO
Gate to Source Leakage Current at V
GS
= -3 V
μ
A
°
C/W
°
C/W
0.5
10
R
TH (CH-A)
Thermal Resistance (Channel-to-Ambient)
750
R
TH (CH-C)
Thermal Resistance (Channel-to-Case)
350
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production
line as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
California Eastern Laboratories
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