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參數(shù)資料
| 型號： | NE25118-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| 中文描述： | 一般用途的雙柵GaAs MESFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | NE25118-T1 |
PART NUMBER
PACKAGE OUTLINE
NE25118
18
SYMBOL
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
μ
A
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
μ
A
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
μ
A
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
dB
1.1
2.5
G
PS
dB
16
20
BV
DSX
V
13
5
I
DSS
mA
20
40
V
G1S (OFF)
V
-3.5
V
G2S (OFF)
V
μ
A
μ
A
-3.5
I
G1SS
I
G2SS
|Y
FS
|
10
10
mS
18
25
35
C
ISS
pF
0.5
1.0
1.5
C
RSS
pF
0.02
0.03
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
LOW C
RSS
:
0.02 pF (TYP)
HIGH POWER GAIN:
20 dB (TYP) AT 900 MHz
L
G1
= 1.0
μ
m, L
G2
= 1.5
μ
m, W
G
= 400
μ
m
ION IMPLANTATION
AVAILABLE IN TAPE & REEL OR BULK
LOW PACKAGE HEIGHT:
1.0 mm MAX
LOW NF:
1.1 dB TYP AT 900 MHz
P
P
POWER GAIN AND NOISE FIGURE
vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
N
)
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25118
DESCRIPTION
The NE25118 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a 4 pin super mini-mold
package, (SOT-343 type). Maximum package height of 1.0
mm makes the NE25118 an ideal device for PCMCIA card
applications.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
California Eastern Laboratories
20
0
10
0 5 10
0
10
G
PS
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
I
D
= 10 mA
f = 900 MHz
5
NF
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| NE25137 | GENERAL PURPOSE DUAL GATE GAAS MESFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE25118-T1-U73 | 功能描述:射頻GaAs晶體管 Dual Gate MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE25118-U73 | 功能描述:射頻GaAs晶體管 Dual Gate MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE25137 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL GATE GAAS MESFET |
| NE25139 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL GATE GAAS MESFET |
| NE25139-T1 | 功能描述:MOSFET SOT-143 DL GT MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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