參數(shù)資料
型號： NE25118-T1
廠商： NEC Corp.
英文描述： GENERAL PURPOSE DUAL-GATE GaAS MESFET
中文描述： 一般用途的雙柵GaAs MESFET
文件頁數(shù)： 3/4頁
文件大?。?/td> 45K
代理商： NE25118-T1
FREQUENCY
S
11
S
21
S
12
S
22
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
0.999
1.000
0.998
0.974
1.005
0.942
0.968
0.920
0.952
0.898
0.915
0.879
-3.3
-7.2
-9.3
-13.4
-15.7
-19.1
-22.2
-25.2
-28.9
-29.4
-35.1
-35.2
2.359
2.389
2.313
2.233
2.420
2.300
2.332
2.229
2.447
2.303
2.348
2.367
177.2
169.3
164.4
160.0
158.4
150.0
145.5
141.5
136.8
131.1
125.8
123.5
0.006
0.004
0.000
0.004
0.007
0.003
0.004
0.008
0.004
0.001
0.004
0.000
-122.3
123.0
-145.0
79.2
29.7
65.0
45.5
80.1
0.969
0.981
0.979
0.967
0.999
0.958
0.997
0.957
0.999
0.968
0.984
0.989
-1.3
-2.9
-3.3
5.6
-5.8
-7.7
-8.5
-9.4
-12.5
-11.1
-14.8
-13.0
8.3
50.9
71.4
91.1
I
I
POWER GAIN AND NOISE FIGURE
vs.
GATE 2 TO SOURCE VOLTAGE
2.0
1.0
-1.0
0 +1.0
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
V
DS
= 5 V
f = 1kHz
1
1
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
NE25118
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
P
P
N
30
15
0
-15
-30
-45
-3.0 -2.0 -1.0 0 +1.0 +2.0
0
5
10
G
PS
NF
V
DS
= 5 V
V
G2S
= 1 V
I
D
= 10 mA
f = 900 MHz
1
NE25118
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
相關PDF資料
PDF描述
NE25137 GENERAL PURPOSE DUAL GATE GAAS MESFET
NE25139 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139-T1 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139T1U71 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139T1U72 GENERAL PURPOSE DUAL-GATE GaAS MESFET
相關代理商/技術參數(shù)
參數(shù)描述
NE25118-T1-U73 功能描述:射頻GaAs晶體管 Dual Gate MESFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
NE25118-U73 功能描述:射頻GaAs晶體管 Dual Gate MESFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
NE25137 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL GATE GAAS MESFET
NE25139 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL GATE GAAS MESFET
NE25139-T1 功能描述:MOSFET SOT-143 DL GT MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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