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參數(shù)資料
| 型號： | NE25118-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| 中文描述： | 一般用途的雙柵GaAs MESFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 45K |
| 代理商： | NE25118-T1 |
25
20
15
10
5
0
0 5 10
Drain Current, I
D
(mA)
0
5
V
DS
= 5 V
V
= 1 V
f = 900 MHz
G
PS
NF
10
Ambient Temperature, T
A
(
°
C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
F
F
|
T
T
Drain Current, I
D
(mA)
NE25118
D
D
250
200
150
100
50
0
0 25 50 75 100 125
FREE AIR
120
Gate 1 to Source Voltage, V
G1S
(V)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
F
F
|
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
13
V
G1S
Gate 1 to Source Voltage
V
-4.5
V
G2S
Gate 2 to Source Voltage V -4.5
I
D
Drain Current mA I
DSS
P
T
Total Power Dissipation
mW
120
T
CH
Channel Temperature
°
C
125
T
STG
Storage Temperature
°
C
-55 to +125
Note:
1. Operation in excess of anyone of these parameters may result
in
permanent damage.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
30
20
10
0
0 10 20 30
V
G2S
= 1.0 V
V
G2S
= 0.5 V
V
DS
= 5 V
f = 1 kHz
Gate 1 to Source Voltage, V
G1S
(V)
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
N
P
P
30
20
10
0
-2.0 -1.0 0 +1.0
0.5 V
0 V
-0.5 V
V
G2S
= 1.0V
V
DS
= 5V
30
20
10
0
-1.0 0 +1.0
0 V
V
G2S
= 1.0
0.5 V
-0.5 V
V
DS
= 5V
f = 1kHz
-2.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE25118-T1-U73 | 功能描述:射頻GaAs晶體管 Dual Gate MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE25118-U73 | 功能描述:射頻GaAs晶體管 Dual Gate MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE25137 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL GATE GAAS MESFET |
| NE25139 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL GATE GAAS MESFET |
| NE25139-T1 | 功能描述:MOSFET SOT-143 DL GT MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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