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參數(shù)資料
| 型號(hào)： | NE24283B |
| 廠商： | NEC Corp. |
| 英文描述： | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) |
| 中文描述： | 超低噪音贗形黃建忠場(chǎng)效應(yīng)管（空間限定） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | NE24283B |
FREQ.
(GHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
1
0.30
22.0
0.88
13
0.33
2
4
6
8
10
12
14
16
18
20
0.31
0.35
0.38
0.43
0.50
0.60
0.71
0.85
1.00
1.20
19.0
16.0
14.0
12.5
11.5
11.0
10.3
9.8
9.2
9.0
0.82
0.73
0.67
0.63
0.57
0.52
0.46
0.40
0.36
0.33
30
57
83
105
128
156
-176
-155
-134
-109
0.31
0.26
0.20
0.13
0.09
0.06
0.05
0.04
0.04
0.05
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Ambient Temperature, T
A
(
°
C)
Drain to Source Voltage, V
DS
(V)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NE24283B
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
V
DS
= 2 V, I
DS
= 10 mA
NOISE FIGURE AND
ASSOCIATED GAIN vs. DRAIN CURRENT
V
DS
= 2 V, f = 12 GHz
N
Gate to Source Voltage, V
GS
(V)
D
D
TRANSCONDUCTANCE AND DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
V
DS
= 2 V
100
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
4.0
V
GSO
Gate to Source Voltage
V
–3.0
I
DS
Drain Current
mA
I
DSS
I
GRF
Gate Current
μ
A
100
T
CH
Channel Temperature
°
C
175
T
STG
Storage Temperature
°
C
-65 to +175
P
T
Total Power Dissipation
mW
165
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage.
Drain Current, I
DS
(mA)
D
D
T
T
A
A
(
0 25 50 75 100 125 150 175 200
250
200
150
100
50
0
Free Air
Infinite
Heat Sink
1.4
1.2
1
0.8
0.6
0.4
0.2
0
14
13
12
11
10
9
8
7
0
5
10
15
20
25
30
35
NF
G
A
50
40
30
20
10
0
1
2
3
4
5
V
GS
0 V
-0.2 V
-0.4 V
-0.6 V
T
m
80
60
40
20
0
0
5
10
15
20
25
30
35
40
45
50
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