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參數(shù)資料
| 型號(hào)： | NDS9959 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強(qiáng)型場效應(yīng)管（漏電流2.0A, 漏源電壓50V，導(dǎo)通電阻0.3Ω）) |
| 中文描述： | 2 A, 50 V, 0.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 340K |
| 代理商： | NDS9959 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
50
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 40 V, V
GS
= 0 V
2
μA
T
J
= 55°C
25
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
ON CHARACTERISTICS
(Note2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
3
4
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 1.5 A
0.3
V
GS
= 5 V, I
D
= 0.6 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 15 V, I
D
= 2.0 A
0.5
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
8
A
Forward Transconductance
1
2.7
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
152
250
pF
Output Capacitance
50
85
pF
Reverse Transfer Capacitance
12
25
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 30 V, I
D
= 0.6 A,
V
GS
= 10 V, R
L
= 50
,
R
GEN
= 6
4
40
ns
Turn - On Rise Time
8
70
ns
Turn - Off Delay Time
9
100
ns
Turn - Off Fall Time
11
70
ns
Total Gate Charge
V
= 25 V,
I
D
= 1.3 A, V
GS
= 10 V
4.3
15
nC
Gate-Source Charge
1.1
nC
Gate-Drain Charge
1.5
nC
NDS9959.SAM
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PDF描述 |
|---|---|
| NDT014L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
| NDT014 | N-Channel Enhancement Mode Field Effect Transistor（2.7A，60V，0.2Ω）(N溝道增強(qiáng)型場效應(yīng)管（漏電流2.7A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
| NDT014(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
| NDT2955 | P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強(qiáng)型場效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導(dǎo)通電阻0.3Ω）) |
| NDT2955(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9959 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS9959_Q | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDSC1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal |
| NDSC3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal |
| NDSE1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.0mm 4 Pin Ceramic Surface Mount Crystal |
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