參數(shù)資料
型號(hào)： NDS9953A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述： 2.9 A, 30 V, 0.13 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 342K
代理商： NDS9953A
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24 V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-2
μA
T
J
= 55°C
-25
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-1.6
-2.8
V
T
J
= 125°C
-0.85
-1.25
-2.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -1.0 A
0.11
0.13
T
J
= 125°C
0.15
0.21
V
GS
= -4.5 V, I
D
= -0.5 A
0.17
0.2
T
J
= 125°C
0.24
0.32
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -15 V, I
D
= -2.9 A
-10
A
-1.5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
4
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
350
pF
Output Capacitance
260
pF
Reverse Transfer Capacitance
100
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
9
40
ns
Turn - On Rise Time
21
40
ns
Turn - Off Delay Time
21
90
ns
Turn - Off Fall Time
8
50
ns
Total Gate Charge
V
= -10 V,
I
D
= -2.9 A, V
GS
= -10 V
10
25
nC
Gate-Source Charge
1.6
nC
Gate-Drain Charge
3.4
nC
NDS9953A.SAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9953A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
NDS9953A_D84Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9955 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9955_L86Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9956 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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