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參數(shù)資料
| 型號： | NDS8958 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.3 A, 30 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 354K |
| 代理商： | NDS8958 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
N-Ch
30
V
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 24 V, V
GS
= 0 V
P-Ch
-30
V
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55°C
10
μA
V
DS
= -24 V, V
GS
= 0 V
P-Ch
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
All
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
1
1.6
2.8
V
T
J
= 125°C
0.7
1.2
2.2
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-1
-1.6
-2.8
T
J
= 125°C
-0.7
-1.2
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 5.3 A
N-Ch
0.033
0.035
T
J
= 125°C
0.046
0.063
V
GS
= 4.5 V, I
D
= 4.4 A
V
GS
= -10 V, I
D
= -4.0 A
0.046
0.05
P-Ch
0.052
0.065
T
J
= 125°C
0.075
0.13
V
GS
= -4.5 V, I
D
= -3.3 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 10 V, I
D
= 5.3 A
V
DS
= -10 V, I
D
= -4.0 A
0.085
0.1
I
D(on)
On-State Drain Current
N-Ch
20
A
P-Ch
-15
g
FS
Forward Transconductance
N-Ch
10.5
S
P-Ch
7
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
720
pF
P-Ch
690
C
oss
Output Capacitance
N-Ch
370
pF
P-Ch
430
C
rss
Reverse Transfer Capacitance
N-Ch
250
pF
P-Ch
160
NDS8958 Rev. C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS8961 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9400 | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS9400A | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS9407 | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS9410S | Single N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8958 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8 |
| NDS8958_Q | 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8961 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8961_F011 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8963 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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