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參數(shù)資料
| 型號(hào)： | NDS9400A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 329K |
| 代理商： | NDS9400A |
February 1996
NDS9400A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDS9400A
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current - Continuous
(Note 1a)
± 3.4
A
- Pulsed
± 10
P
D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
NDS9400A.SAM
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
1
5
6
7
8
4
3
2
-3.4A, -30V. R
DS(ON)
= 0.13
@ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Rugged and reliable.
1997 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9400A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SO-8 |
| NDS9400A_D87Z | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9405 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9405_D84Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9407 | 功能描述:MOSFET Single P-Ch MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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