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參數(shù)資料
| 型號： | NDS9410 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Single N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 單個N -溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 230K |
| 代理商： | NDS9410 |
April 2000
2000 Fairchild Semiconductor Corporation
NDS9410A Rev B(W)
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
advanced
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
Features
7.3 A, 30 V.
R
DS(ON)
= 28 m
@ V
GS
= 10 V
R
DS(ON)
= 42 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
30
±
20
7.3
20
2.5
1.2
1.0
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
NDS9410A
NDS9410A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
N
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS9410A | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS9430 | 30V P-Channel PowerTrench MOSFET |
| NDS9430A | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS9435A | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS9925A | Dual N-Channel Enhancement Mode Field Effect Transistor（4.5A，20V，0.06Ω）(雙N溝道增強(qiáng)型場效應(yīng)管（漏電流4.5A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9410A | 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9410A_D84Z | 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9410A_Q | 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9410S | 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9430 | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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