參數(shù)資料
型號(hào): NDS9400A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: Single P-Channel Enhancement Mode Field Effect Transistor
中文描述: 3400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 9/10頁(yè)
文件大小: 329K
代理商: NDS9400A
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
SO-8 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A
9
相關(guān)PDF資料
PDF描述
NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor
NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor
NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor
NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor
NDS9430 30V P-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9400A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SO-8
NDS9400A_D87Z 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9405 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9405_D84Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9407 功能描述:MOSFET Single P-Ch MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube