參數(shù)資料
型號： NDS8858H
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Complementry MOSFET Half Bridge
中文描述： 6300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁數(shù)： 7/12頁
文件大?。?/td> 350K
代理商： NDS8858H
NDS8858H Rev. C
0
5
10
15
20
25
0
4
8
12
16
20
I , DRAIN CURRENT (A)
g
J
F
V = 10V
125°C
25°C
-20
-16
-12
-8
-4
0
0
3
6
9
12
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = -10V
125°C
Typical Electrical and Thermal Characteristics
Figure 20. P-Channel Transconductance Variation
with Drain Current and Temperature.
Figure 19. N-Channel Transconductance Variation with
Drain Current and Temperature.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
Figure 23. SO-8 Single Device DC Power Dissipation versus
Copper Mounting Pad Area.
Figure 21. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature
.
0.2
0.4
V , BODY DIODE FORWARD VOLTAGE (V)
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
1
5
10
20
I
S
TJ
25°C
-55°C
V =0V
Figure 22. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature
.
0
0.4
-V , BODY DIODE FORWARD VOLTAGE (V)
0.8
1.2
1.6
2
0.001
0.01
0.1
1
5
10
20
-
S
TJ
25°C
-55°C
V = 0V
相關(guān)PDF資料
PDF描述
NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8858H 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8926 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8934 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8936 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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