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參數(shù)資料
| 型號： | NDS8858H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementry MOSFET Half Bridge |
| 中文描述： | 6300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 350K |
| 代理商： | NDS8858H |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
N-Ch
12
20
ns
P-Ch
9
20
t
r
Turn - On Rise Time
N-Ch
13
30
ns
P-Ch
20
25
t
D(off)
Turn - Off Delay Time
N-Ch
29
50
ns
P-Ch
40
50
t
f
Turn - Off Fall Time
N-Ch
10
20
ns
P-Ch
19
40
Q
g
Total Gate Charge
N-Channel
V
= 10 V,
I
D
= 4.8 A, V
GS
= 10 V
P-Channel
V
= -10 V,
I
D
= -4.8 A, V
GS
= -10 V
N-Ch
19
30
nC
P-Ch
21
30
Q
gs
Gate-Source Charge
N-Ch
2.1
nC
P-Ch
3.2
Q
gd
Gate-Drain Charge
N-Ch
5.2
nC
P-Ch
5.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
2
A
P-Ch
-2
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.0 A
(Note 2)
V
GS
= 0 V, I
S
= -2.0 A
(Note 2)
N-Channel
V
GS
= 0 V, I
F
= 2.0 A, dI
F
/dt = 100 A/μs
P-Channel
V
GS
= 0 V, I
F
= -2.0 A, dI
F
/dt = 100 A/μs
N-Ch
0.9
1.2
V
P-Ch
-0.85
-1.2
t
rr
Reverse Recovery Time
N-Ch
100
ns
P-Ch
100
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 105
o
C/W when mounted on a 0.04 in
2
pad of 2oz copper.
c. 125
o
C/W when mounted on a 0.006 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS8858H Rev. C
1a
1b
1c
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS8926 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8928 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8947 | Dual P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8858H | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS8926 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8928 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8934 | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8936 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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