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參數(shù)資料
| 型號： | NDS335 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 59K |
| 代理商： | NDS335 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 16 V, V
GS
= 0 V
20
V
Zero Gate Voltage Drain Current
1
μA
T
J
=125°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
0.5
0.7
1
V
T
J
=125°C
0.3
0.5
0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 2.7 V, I
D
= 1.7 A
0.084
0.14
T
J
=125°C
0.13
0.25
V
GS
= 4.5 V, I
D
= 1.7 A
V
GS
= 2.7 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 1.7 A,
0.065
0.11
I
D(ON)
On-State Drain Current
5
A
10
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
6
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
240
pF
Output Capacitance
130
pF
Reverse Transfer Capacitance
40
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 4.5 V, R
Gen
= 6
8
20
ns
Turn - On Rise Time
29
45
ns
Turn - Off Delay Time
28
40
ns
Turn - Off Fall Time
8
20
ns
Total Gate Charge
V
DS
= 10 V, I
D
= 1.7 A,
V
GS
= 4.5 V
6.4
9
nC
Gate-Source Charge
0.5
nC
Gate-Drain Charge
2
nC
NDS335 Rev.C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS335N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS336P | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.2A，-20V，0.27Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-1.2A, 漏源電壓-20V，導(dǎo)通電阻0.27Ω）) |
| NDS336 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS351AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.2A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.2A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）) |
| NDS351N | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.1A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS335N | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS335N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS335N_D87Z | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS335N_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS336 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor |
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