參數(shù)資料
型號: NDS335
廠商: Fairchild Semiconductor Corporation
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù): 5/6頁
文件大?。?/td> 59K
代理商: NDS335
NDS335 Rev.C
Typical Electrical Characteristics
(continued)
-50
-25
0
25
50
75
100
125
150
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (°C)
D
B
D
I = 250μA
Figure 7. Breakdown Voltage Variation with
Temperature
.
0.1
0.2
0.5
1
2
5
10
20
10
20
50
100
200
400
600
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 9. Capacitance Characteristics
.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
I
J
25°C
-55°C
V = 0V
S
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature
.
0
2
4
6
8
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 1.7A
10V
15V
V = 5V
DS
Figure 10. Gate Charge Characteristics
.
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms
.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
相關(guān)PDF資料
PDF描述
NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.2A,-20V,0.27Ω)(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管(漏電流-1.2A, 漏源電壓-20V,導(dǎo)通電阻0.27Ω))
NDS336 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.2A,30V,0.25Ω)(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管(漏電流1.2A, 漏源電壓30V,導(dǎo)通電阻0.25Ω))
NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.1A,30V,0.25Ω)(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管(漏電流1.1A, 漏源電壓30V,導(dǎo)通電阻0.25Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS335N 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS335N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS335N_D87Z 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS335N_Q 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS336 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor