參數(shù)資料
型號(hào)： NDP4050L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 50V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場效應(yīng)管（漏電流15A, 漏源電壓50V，導(dǎo)通電阻0.10Ω）)
中文描述： 15 A, 50 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 68K
代理商： NDP4050L
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 15 A
40
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
15
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 50 V, V
GS
= 0 V
50
V
Zero Gate Voltage Drain Current
250
μA
T
J
=125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.5
2
V
T
J
=125°C
0.65
1.1
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 7.5 A
0.085
0.1
T
J
=125°C
0.14
0.16
V
GS
= 10 V, I
D
= 15 A
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 7.5 A
0.07
0.08
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
15
A
Forward Transconductance
3
8
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
510
600
pF
170
200
pF
50
100
pF
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 15 A,
V
GS
= 5 V, R
GEN
= 51
,
R
GS
= 51
9
20
nS
t
r
t
D(off)
Turn - On Rise Time
151
250
nS
Turn - Off Delay Time
35
100
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
61
150
nS
Total Gate Charge
V
= 48 V,
I
D
= 15 A, V
GS
= 5 V
11
17
nC
Gate-Source Charge
2
nC
Gate-Drain Charge
6.1
nC
NDP4050L Rev. B / NDB4050L Rev. C
相關(guān)PDF資料
PDF描述
NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 50V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場效應(yīng)管（漏電流15A, 漏源電壓50V，導(dǎo)通電阻0.10Ω）)
NDP4050 N-Channel Enhancement Mode Field Effect Transistor（15A, 50V，0.10Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流15A, 漏源電壓50V，導(dǎo)通電阻0.10Ω）)
NDB4050 0 OHM 1% 1/20W SMT (0402) CHIP RES
NDP4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 650V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）)
NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP4060 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP4060 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDP4060_Q 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP4060L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP4060L_Q 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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