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參數(shù)資料
| 型號(hào)： | NDP4060L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 650V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）) |
| 中文描述： | 15 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 68K |
| 代理商： | NDP4060L |
April 1996
NDP4060L / NDB4060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP4060L
NDB4060L
Units
V
DSS
V
DGR
Drain-Source Voltage
60
V
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
± 16
V
- Nonrepetitive (t
P
< 50 μs)
- Continuous
± 25
I
D
Drain Current
15
A
- Pulsed
45
P
D
Total Power Dissipation @ T
C
= 25
°
C
50
W
Derate above 25
°
C
0.33
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Temperature
-65 to 175
°C
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
°C
NDP4060L Rev. B / NDB4060L Rev. C
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
DS(ON)
= 0.1
@ V
GS
= 5V
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDB4060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）) |
| NDP4060 | N-Channel Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）) |
| NDB4060 | N-Channel Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）) |
| NDP6030 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP4060L_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP408 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP408A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP408AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP408B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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